Mark Johnson
Title
Cited by
Cited by
Year
MBE growth and properties of ZnO on sapphire and SiC substrates
MAL Johnson, S Fujita, WH Rowland, WC Hughes, JW Cook, ...
Journal of Electronic Materials 25 (5), 855-862, 1996
2271996
Molecular beam epitaxy growth and properties of GaN films on GaN/SiC substrates
WC Hughes, WH Rowland Jr, MAL Johnson, S Fujita, JW Cook Jr, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1995
2251995
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
JF Muth, JD Brown, MAL Johnson, Z Yu, RM Kolbas, JW Cook, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
1811999
Methods for nanoscale structures from optical lithography and subsequent lateral growth
M Johnson, D Barlage, J Muth
US Patent App. 10/550,178, 2007
842007
JR, and JF Schetzina
JF Muth, JD Brown, MAL Johnson, Z Yu, RM Kolbas, JW Cook
MRS Internet J. Nitride Semicond. Res. 4S1 G 5, 2, 1999
821999
Molecular beam epitaxy growth and properties of GaN, AlxGa1−xN, and AlN on GaN/SiC substrates
MAL Johnson, S Fujita, WH Rowland Jr, KA Bowers, WC Hughes, YW He, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1996
561996
Selective area metalorganic molecular-beam epitaxy of GaN and the growth of luminescent microcolumns on
S Guha, NA Bojarczuk, MAL Johnson, JF Schetzina
Applied physics letters 75 (4), 463-465, 1999
521999
Growth of GaN, InGaN, and AlGaN films and quantum well structures by molecular beam epitaxy
MAL Johnson, WC Hughes, WH Rowland Jr, JW Cook Jr, JF Schetzina, ...
Journal of crystal growth 175, 72-78, 1997
521997
Study of the epitaxial–lateral-overgrowth (ELO) process for GaN on sapphire
Z Yu, MAL Johnson, JD Brown, NA El-Masry, JW Cook Jr, JF Schetzina
Journal of crystal growth 195 (1-4), 333-339, 1998
361998
Reactive MBE growth of GaN and GaN: H on GaN/SiC substrates
MAL Johnson, Z Yu, C Boney, WC Hughes, JW Cook, JF Schetzina, ...
MRS Online Proceedings Library (OPL) 449, 1996
291996
Fabrication of wafer scale, aligned sub-25 nm nanowire and nanowire templates using planar edge defined alternate layer process
SR Sonkusale, CJ Amsinck, DP Nackashi, NH Di Spigna, D Barlage, ...
Physica E: Low-dimensional Systems and Nanostructures 28 (2), 107-114, 2005
272005
Quadrennial technology review 2015
US DoE
US Department of Energy, Washington, DC, 2015
262015
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
Z Yu, MAL Johnson, JD Brown, NA El-Masry, JF Muth, JW Cook, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
261999
Planar gallium nitride ultraviolet optical modulator
AE Oberhofer, JF Muth, MAL Johnson, ZY Chen, EF Fleet, GD Cooper
Applied physics letters 83 (14), 2748-2750, 2003
242003
Epitaxial growth of lanthanide oxides and on GaN
JS Jur, VD Wheeler, DJ Lichtenwalner, JP Maria, MAL Johnson
Applied Physics Letters 98 (4), 042902, 2011
232011
Ohmic contacts on n-type Al/sub 0.59/Ga/sub 0.41/N for solar blind detectors
D Selvanathan, L Zhou, V Kumar, JP Long, MAL Johnson, JF Schetzina, ...
Electronics Letters 38 (14), 755-756, 2002
232002
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications
MAL Johnson, Z Yu, JD Brown, FA Koeck, NA El-Masry, HS Kong, ...
Materials Research Society Internet Journal of Nitride Semiconductor …, 1999
231999
SiC/GaN power semiconductor devices: a theoretical comparison and experimental evaluation under different switching conditions
K Li, P Evans, M Johnson
IET Electrical Systems in Transportation 8 (1), 3-11, 2018
212018
Indium incorporation in InGaN/GaN quantum wells grown on m‐plane GaN substrate and c‐plane sapphire
KY Lai, T Paskova, VD Wheeler, TY Chung, JA Grenko, MAL Johnson, ...
physica status solidi (a) 209 (3), 559-564, 2012
202012
Transmission electron microscopy studies of regrown GaN Ohmic contacts on patterned substrates for metal oxide semiconductor field effect transistor applications
YN Saripalli, L Pei, T Biggerstaff, S Ramachandran, GJ Duscher, ...
Applied physics letters 90 (20), 204106, 2007
192007
The system can't perform the operation now. Try again later.
Articles 1–20