Lorenzo Faraone
Lorenzo Faraone
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Cited by
Cited by
Third-generation infrared photodetector arrays
A Rogalski, J Antoszewski, L Faraone
Journal of applied physics 105 (9), 4, 2009
Progress, challenges, and opportunities for HgCdTe infrared materials and detectors
W Lei, J Antoszewski, L Faraone
Applied Physics Reviews 2 (4), 041303, 2015
New concepts in infrared photodetector designs
P Martyniuk, J Antoszewski, M Martyniuk, L Faraone, A Rogalski
Applied Physics Reviews 1 (4), 041102, 2014
Effect of deposition conditions on mechanical properties of low-temperature PECVD silicon nitride films
H Huang, KJ Winchester, A Suvorova, BR Lawn, Y Liu, XZ Hu, JM Dell, ...
Materials Science and Engineering: A 435, 453-459, 2006
Improved quantitative mobility spectrum analysis for Hall characterization
I Vurgaftman, JR Meyer, CA Hoffman, D Redfern, J Antoszewski, ...
Journal of Applied Physics 84 (9), 4966-4973, 1998
Scattering mechanisms limiting two-dimensional electron gas mobility in modulation-doped field-effect transistors
J Antoszewski, M Gracey, JM Dell, L Faraone, TA Fisher, G Parish, YF Wu, ...
Journal of Applied Physics 87 (8), 3900-3904, 2000
Floating gate memory device with facing asperities on floating and control gates
L Faraone
US Patent 4,757,360, 1988
Widely tunable MEMS-based Fabry–Perot filter
JS Milne, JM Dell, AJ Keating, L Faraone
Journal of microelectromechanical systems 18 (4), 905-913, 2009
Magneto-transport characterization using quantitative mobility-spectrum analysis
J Antoszewski, DJ Seymour, L Faraone, JR Meyer, CA Hoffman
Journal of electronic materials 24 (9), 1255-1262, 1995
/sup 60/Co gamma irradiation effects on n-GaN Schottky diodes
GA Umana-Membreno, JM Dell, G Parish, BD Nener, L Faraone, ...
IEEE Transactions on Electron Devices 50 (12), 2326-2334, 2003
Temperature-dependent characterization of AlGaN/GaN HEMTs: Thermal and source/drain resistances
R Menozzi, GA Umana-Membreno, BD Nener, G Parish, G Sozzi, ...
IEEE Transactions on Device and Materials Reliability 8 (2), 255-264, 2008
MEMS-based microspectrometer technologies for NIR and MIR wavelengths
LP Schuler, JS Milne, JM Dell, L Faraone
Journal of Physics D: Applied Physics 42 (13), 133001, 2009
Determination of mechanical properties of PECVD silicon nitride thin films for tunable MEMS Fabry–Perot optical filters
H Huang, K Winchester, Y Liu, XZ Hu, CA Musca, JM Dell, L Faraone
Journal of Micromechanics and Microengineering 15 (3), 608, 2005
Monolithic integration of an infrared photon detector with a MEMS-based tunable filter
CA Musca, J Antoszewski, KJ Winchester, AJ Keating, T Nguyen, K Silva, ...
IEEE electron device letters 26 (12), 888-890, 2005
Quantitative mobility spectrum analysis of multicarrier conduction in semiconductors
JR Meyer, CA Hoffman, J Antoszewski, L Faraone
Journal of applied physics 81 (2), 709-713, 1997
gamma-irradiation-induced defects in
GA Umana-Membreno, JM Dell, TP Hessler, BD Nener, G Parish, ...
Applied physics letters 80 (23), 4354-4356, 2002
HgCdTe mid-wavelength IR photovoltaic detectors fabricated using plasma induced junction technology
JM Dell, J Antoszewski, MH Rais, C Musca, JK White, BD Nener, ...
Journal of Electronic Materials 29 (6), 841-848, 2000
Characterization of thermally oxidized n+polycrystalline silicon
L Faraone, RD Vibronek, JT McGinn
IEEE transactions on electron devices 32 (3), 577-583, 1985
Effects of partially occupied sub-bands on two-dimensional electron mobility in heterostructures
A Asgari, M Kalafi, L Faraone
Journal of applied physics 95 (3), 1185-1190, 2004
Electron mobility, Hall scattering factor, and sheet conductivity in AlGaN/AlN/GaN heterostructures
A Asgari, S Babanejad, L Faraone
Journal of Applied Physics 110 (11), 113713, 2011
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