a asenov
a asenov
Verified email at glasgow.ac.uk
TitleCited byYear
Random dopant induced threshold voltage lowering and fluctuations in sub-0.1/spl mu/m MOSFET's: A 3-D" atomistic" simulation study
A Asenov
IEEE Transactions on Electron Devices 45 (12), 2505-2513, 1998
7191998
Simulation of intrinsic parameter fluctuations in decananometer and nanometer-scale MOSFETs
A Asenov, AR Brown, JH Davies, S Kaya, G Slavcheva
IEEE transactions on electron devices 50 (9), 1837-1852, 2003
6472003
Intrinsic parameter fluctuations in decananometer MOSFETs introduced by gate line edge roughness
A Asenov, S Kaya, AR Brown
IEEE Transactions on Electron Devices 50 (5), 1254-1260, 2003
6182003
Simulation study of individual and combined sources of intrinsic parameter fluctuations in conventional nano-MOSFETs
G Roy, AR Brown, F Adamu-Lema, S Roy, A Asenov
IEEE Transactions on Electron Devices 53 (12), 3063-3070, 2006
3062006
1 μm gate length, In 0.75 Ga0. 25 As channel, thin body n-MOSFET on InP substrate with transconductance of 737 μm
RJW Hill, R Droopad, DAJ Moran, X Li, H Zhou, D Macintyre, S Thorns, ...
Electronics Letters 44 (7), 498-500, 2008
298*2008
RTS amplitudes in decananometer MOSFETs: 3-D simulation study
A Asenov, R Balasubramaniam, AR Brown, JH Davies
IEEE Transactions on Electron Devices 50 (3), 839-845, 2003
2622003
Intrinsic threshold voltage fluctuations in decanano MOSFETs due to local oxide thickness variations
A Asenov, S Kaya, JH Davies
IEEE Transactions on electron devices 49 (1), 112-119, 2002
2542002
Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density-gradient simulation study
A Asenov, G Slavcheva, AR Brown, JH Davies, S Saini
Electron Devices, IEEE Transactions on 48 (4), 722-729, 2001
2442001
Statistical variability and reliability in nanoscale FinFETs
X Wang, AR Brown, B Cheng, A Asenov
2011 International Electron Devices Meeting, 5.4. 1-5.4. 4, 2011
2282011
Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-/spl mu/m MOSFET's with epitaxial and/spl delta/-doped channels
A Asenov, S Saini
IEEE Transactions on Electron Devices 46 (8), 1718-1724, 1999
2131999
Enhancement-Mode GaAs MOSFETs With an In0. 3 Ga0. 7As Channel, a Mobility of Over 5000 cm2/VĚ s, and Transconductance of Over 475 μS/μm
RJW Hill, DAJ Moran, X Li, H Zhou, D Macintyre, S Thoms, A Asenov, ...
Electron Device Letters, IEEE 28 (12), 1080-1082, 2007
2072007
Design and fabrication of memory devices based on nanoscale polyoxometalate clusters
C Busche, L VilÓ-Nadal, J Yan, HN Miras, DL Long, VP Georgiev, ...
Nature 515 (7528), 545, 2014
1872014
Si/SiGe heterostructure parameters for device simulations
L Yang, JR Watling, RCW Wilkins, M Boriši, JR Barker, A Asenov, S Roy
Semiconductor science and technology 19, 1174, 2004
1862004
A self-consistent full 3-D real-space NEGF simulator for studying nonperturbative effects in nano-MOSFETs
A Martinez, M Bescond, JR Barker, A Svizhenko, MP Anantram, C Millar, ...
IEEE Transactions on Electron Devices 54 (9), 2213-2222, 2007
1402007
Poly-Si-gate-related variability in decananometer MOSFETs with conventional architecture
AR Brown, G Roy, A Asenov
IEEE Transactions on Electron Devices 54 (11), 3056-3063, 2007
1392007
Where do the dopants go?
S Roy, A Asenov
Science 309 (5733), 388, 2005
1362005
Simulation of statistical variability in nano MOSFETs
A Asenov
2007 IEEE symposium on VLSI technology, 86-87, 2007
1332007
Statistical threshold-voltage variability in scaled decananometer bulk HKMG MOSFETs: a full-scale 3-D simulation scaling study
X Wang, AR Brown, N Idris, S Markov, G Roy, A Asenov
Electron Devices, IEEE Transactions on 58 (8), 2293-2301, 2011
1242011
Integrating intrinsic parameter fluctuation description into BSIMSOI to forecast sub-15 nm UTB SOI based 6T SRAM operation
K Samsudin, B Cheng, AR Brown, S Roy, A Asenov
Solid-State Electronics 50 (1), 86-93, 2006
1162006
Intrinsic fluctuations in sub 10-nm double-gate MOSFETs introduced by discreteness of charge and matter
AR Brown, A Asenov, JR Watling
IEEE Transactions on Nanotechnology 1 (4), 195-200, 2002
1162002
The system can't perform the operation now. Try again later.
Articles 1–20