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Randall Feenstra
Randall Feenstra
Professor of Physics, Carnegie Mellon University
Verified email at cmu.edu - Homepage
Title
Cited by
Cited by
Year
Tunneling spectroscopy of the Si (111) 2× 1 surface
RM Feenstra, JA Stroscio, AP Fein
Surface science 181 (1-2), 295-306, 1987
8791987
Electronic structure of the Si (111) 2× 1 surface by scanning-tunneling microscopy
JA Stroscio, RM Feenstra, AP Fein
Physical review letters 57 (20), 2579, 1986
8191986
Atom-selective imaging of the GaAs (110) surface
RM Feenstra, JA Stroscio, J Tersoff, AP Fein
Physical Review Letters 58 (12), 1192, 1987
7961987
Tunneling spectroscopy of the (110) surface of direct-gap III-V semiconductors
RM Feenstra
Physical Review B 50 (7), 4561, 1994
5511994
Tunneling spectroscopy of the GaAs (110) surface
RM Feenstra, JA Stroscio
Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1987
5431987
Reconstructions of the GaN (000 1) surface
AR Smith, RM Feenstra, DW Greve, J Neugebauer, JE Northrup
Physical review letters 79 (20), 3934, 1997
4481997
Structure of GaN (0001): The laterally contracted Ga bilayer model
JE Northrup, J Neugebauer, RM Feenstra, AR Smith
Physical Review B 61 (15), 9932, 2000
4322000
Determination of wurtzite GaN lattice polarity based on surface reconstruction
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
Applied physics letters 72 (17), 2114-2116, 1998
4071998
Adatom kinetics on and below the surface: The existence of a new diffusion channel
J Neugebauer, TK Zywietz, M Scheffler, JE Northrup, H Chen, ...
Physical Review Letters 90 (5), 056101, 2003
3902003
Reconstructions of GaN (0001) and (0001) surfaces: Ga-rich metallic structures
AR Smith, RM Feenstra, DW Greve, MS Shin, M Skowronski, ...
JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY B MICROELECTRONICS AND NANOMETER …, 1998
3211998
Local state density and long-range screening of adsorbed oxygen atoms on the GaAs (110) surface
JA Stroscio, RM Feenstra, AP Fein
Physical review letters 58 (16), 1668, 1987
3061987
Real-space observation of π-bonded chains and surface disorder on Si (111) 2× 1
RM Feenstra, WA Thompson, AP Fein
Physical review letters 56 (6), 608, 1986
2981986
Geometric and electronic structure of antimony on the GaAs (110) surface studied by scanning tunneling microscopy
P Mårtensson, RM Feenstra
Physical Review B 39 (11), 7744, 1989
2941989
Inversion of wurtzite GaN (0001) by exposure to magnesium
V Ramachandran, RM Feenstra, WL Sarney, L Salamanca-Riba, ...
Applied Physics Letters 75 (6), 808-810, 1999
2781999
Preparation of atomically flat surfaces on silicon carbide using hydrogen etching
V Ramachandran, MF Brady, AR Smith, RM Feenstra, DW Greve
Journal of Electronic Materials 27 (4), 308-312, 1998
2711998
Observation of bulk defects by scanning tunneling microscopy and spectroscopy: Arsenic antisite defects in GaAs
RM Feenstra, JM Woodall, GD Pettit
Physical review letters 71 (8), 1176, 1993
2611993
Graphene nucleation density on copper: fundamental role of background pressure
I Vlassiouk, S Smirnov, M Regmi, SP Surwade, N Srivastava, R Feenstra, ...
The Journal of Physical Chemistry C 117 (37), 18919-18926, 2013
2592013
Asymmetries in dislocation densities, surface morphology, and strain of GaInAs/GaAs single heterolayers
KL Kavanagh, MA Capano, LW Hobbs, JC Barbour, PMJ Maree, W Schaff, ...
Journal of applied physics 64 (10), 4843-4852, 1988
2561988
Probing Critical Point Energies of Transition Metal Dichalcogenides: Surprising Indirect Gap of Single Layer WSe2
C Zhang, Y Chen, A Johnson, MY Li, LJ Li, PC Mende, RM Feenstra, ...
Nano letters 15 (10), 6494-6500, 2015
2522015
Influence of misfit dislocations on the surface morphology of Si1−xGex films
MA Lutz, RM Feenstra, FK LeGoues, PM Mooney, JO Chu
Applied Physics Letters 66 (6), 724-726, 1995
2401995
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Articles 1–20