Jisheng Han
Jisheng Han
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Mechanism of Threshold Voltage Shift in -GaN Gate AlGaN/GaN Transistors
X Tang, B Li, HA Moghadam, P Tanner, J Han, S Dimitrijev
IEEE Electron Device Letters 39 (8), 1145-1148, 2018
Growth of 3C–SiC on 150-mm Si (100) substrates by alternating supply epitaxy at 1000 C
L Wang, S Dimitrijev, J Han, A Iacopi, L Hold, P Tanner, HB Harrison
Thin solid films 519 (19), 6443-6446, 2011
Power-switching applications beyond silicon: Status and future prospects of SiC and GaN devices
S Dimitrijev, J Han, HA Moghadam, A Aminbeidokhti
Mrs Bulletin 40 (5), 399-405, 2015
Electrical and physical characterization of gate oxides on grown in diluted
KY Cheong, S Dimitrijev, J Han, HB Harrison
Journal of applied physics 93 (9), 5682-5686, 2003
The effect of Al addition on the gas sensing properties of Fe2O3-based sensors
JS Han, T Bredow, DE Davey, AB Yu, DE Mulcahy
Sensors and Actuators B: Chemical 75 (1-2), 18-23, 2001
Associated comorbidities in psoriasis and inflammatory bowel disease
AM Binus, J Han, AA Qamar, EA Mody, EW Holt, AA Qureshi
Journal of the European Academy of Dermatology and Venereology 26 (5), 644-650, 2012
Demonstration of p-type 3C–SiC grown on 150 mm Si (1 0 0) substrates by atomic-layer epitaxy at 1000 C
L Wang, S Dimitrijev, J Han, P Tanner, A Iacopi, L Hold
Journal of Crystal Growth 329 (1), 67-70, 2011
Surface-passivation effects on the performance of 4H-SiC BJTs
R Ghandi, B Buono, M Domeij, R Esteve, A Schöner, J Han, S Dimitrijev, ...
IEEE Transactions on Electron Devices 58 (1), 259-265, 2010
Fundamental piezoresistive coefficients of p-type single crystalline 3C-SiC
HP Phan, D Viet Dao, P Tanner, L Wang, NT Nguyen, Y Zhu, S Dimitrijev
Applied Physics Letters 104 (11), 2014
Ultrathin Fe 2 O 3 nanoflakes using smart chemical stripping for high performance lithium storage
Y Wang, J Han, X Gu, S Dimitrijev, Y Hou, S Zhang
Journal of materials chemistry A 5 (35), 18737-18743, 2017
Active defects in MOS devices on 4H-SiC: A critical review
HA Moghadam, S Dimitrijev, J Han, D Haasmann
Microelectronics Reliability 60, 1-9, 2016
Transient-current method for measurement of active near-interface oxide traps in 4H-SiC MOS capacitors and MOSFETs
HA Moghadam, S Dimitrijev, J Han, D Haasmann, A Aminbeidokhti
IEEE Transactions on Electron Devices 62 (8), 2670-2674, 2015
Anchoring ultra-fine TiO 2–SnO 2 solid solution particles onto graphene by one-pot ball-milling for long-life lithium-ion batteries
S Li, M Ling, J Qiu, J Han, S Zhang
Journal of Materials Chemistry A 3 (18), 9700-9706, 2015
Experimental investigation of piezoresistive effect in p-type 4H–SiC
TK Nguyen, HP Phan, T Dinh, J Han, S Dimitrijev, P Tanner, ARM Foisal, ...
IEEE Electron Device Letters 38 (7), 955-958, 2017
Effects of nitrogen incorporation on the interfacial layer between thermally grown dielectric films and SiC
SA Corrêa, C Radtke, GV Soares, L Miotti, IJR Baumvol, S Dimitrijev, ...
Applied Physics Letters 94 (25), 2009
Photoelectrochemical Manifestation of Photoelectron Transport Properties of Vertically Aligned Nanotubular TiO2 Photoanodes
H Zhang, H Zhao, S Zhang, X Quan
ChemPhysChem 9 (1), 117-123, 2008
Robust TiO 2/BDD heterojunction photoanodes for determination of chemical oxygen demand in wastewaters
Y Han, J Qiu, Y Miao, J Han, S Zhang, H Zhang, H Zhao
Analytical methods 3 (9), 2003-2009, 2011
Description and verification of the fundamental current mechanisms in silicon carbide Schottky barrier diodes
J Nicholls, S Dimitrijev, P Tanner, J Han
Scientific reports 9 (1), 3754, 2019
Charge trapping properties of 3C-and 4H-SiC MOS capacitors with nitrided gate oxides
R Arora, J Rozen, DM Fleetwood, KF Galloway, CX Zhang, J Han, ...
Ieee transactions on nuclear science 56 (6), 3185-3191, 2009
The effect of device geometry and crystal orientation on the stress-dependent offset voltage of 3C–SiC (100) four terminal devices
A Qamar, HP Phan, J Han, P Tanner, T Dinh, L Wang, S Dimitrijev, ...
Journal of Materials Chemistry C 3 (34), 8804-8809, 2015
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