Maria Peressi
Maria Peressi
University of Trieste, Trieste (Italy)
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Cited by
Cited by
Band engineering at interfaces: theory and numerical experiments
M Peressi, N Binggeli, A Baldereschi
Journal of Physics D: Applied Physics 31 (11), 1273, 1998
First-principle study of hydroxyl functional groups on pristine, defected graphene, and graphene epoxide
N Ghaderi, M Peressi
The Journal of Physical Chemistry C 114 (49), 21625-21630, 2010
Carbon dioxide hydrogenation on Ni (110)
E Vesselli, L De Rogatis, X Ding, A Baraldi, L Savio, L Vattuone, M Rocca, ...
Journal of the American Chemical Society 130 (34), 11417-11422, 2008
Local interface composition and band discontinuities in heterovalent heterostructures
R Nicolini, L Vanzetti, G Mula, G Bratina, L Sorba, A Franciosi, M Peressi, ...
Physical review letters 72 (2), 294, 1994
Real-time imaging of adatom-promoted graphene growth on nickel
LL Patera, F Bianchini, C Africh, C Dri, G Soldano, MM Mariscal, ...
Science 359 (6381), 1243-1246, 2018
Hydrogen-Assisted Transformation of CO2 on Nickel: The Role of Formate and Carbon Monoxide
E Vesselli, M Rizzi, L De Rogatis, X Ding, A Baraldi, G Comelli, L Savio, ...
The Journal of Physical Chemistry Letters 1 (1), 402-406, 2010
Atomic scale identification of coexisting graphene structures on Ni (111)
F Bianchini, LL Patera, M Peressi, C Africh, G Comelli
The journal of physical chemistry letters 5 (3), 467-473, 2014
Tuning band offsets at semiconductor interfaces by intralayer deposition
M Peressi, S Baroni, R Resta, A Baldereschi
Physical Review B 43 (9), 7347, 1991
Electron localization in the insulating state: Application to crystalline semiconductors
C Sgiarovello, M Peressi, R Resta
Physical Review B 64 (11), 115202, 2001
Interaction of carbon dioxide with Ni (110): A combined experimental and theoretical study
X Ding, L De Rogatis, E Vesselli, A Baraldi, G Comelli, R Rosei, L Savio, ...
Physical Review B—Condensed Matter and Materials Physics 76 (19), 195425, 2007
Spectroscopy of semiconductor microstructures
S Baroni, R Resta, A Baldereschi, M Peressi, G Fasol, A Fasolino, P Lugli
NATO Advanced Research Workshop on Spectroscopy of Semiconductor …, 1989
Structural and electronic properties of
M Peressi, A Baldereschi
Journal of applied physics 83 (6), 3092-3095, 1998
Microscopic capacitors and neutral interfaces in III-V/IV/III-V semiconductor heterostructures
G Biasiol, L Sorba, G Bratina, R Nicolini, A Franciosi, M Peressi, S Baroni, ...
Physical review letters 69 (8), 1283, 1992
Structural and electronic properties of NiMnSb Heusler compound and its interface with GaAs
A Debernardi, M Peressi, A Baldereschi
Materials Science and Engineering: C 23 (6-8), 743-746, 2003
Electronic structure of InP/As interfaces
M Peressi, S Baroni, A Baldereschi, R Resta
Physical Review B 41 (17), 12106, 1990
Structural properties and energetics of intrinsic and Si-doped GaAs nanowires: first-principles pseudopotential calculations
N Ghaderi, M Peressi, N Binggeli, H Akbarzadeh
Physical Review B—Condensed Matter and Materials Physics 81 (15), 155311, 2010
Ab initio calculation of the band offset at strained GaAs/InAs (001) heterojunctions
N Tit, M Peressi, S Baroni
Physical Review B 48 (23), 17607, 1993
Computational and experimental imaging of Mn defects on GaAs (110) cross-sectional surfaces
A Stroppa, X Duan, M Peressi, D Furlanetto, S Modesti
Physical Review B—Condensed Matter and Materials Physics 75 (19), 195335, 2007
Stabilization of half metallicity in Mn-doped silicon upon Ge alloying
S Picozzi, F Antoniella, A Continenza, A MoscaConte, A Debernardi, ...
Physical Review B—Condensed Matter and Materials Physics 70 (16), 165205, 2004
Temperature-driven changes of the graphene edge structure on Ni (111): Substrate vs hydrogen passivation
LL Patera, F Bianchini, G Troiano, C Dri, C Cepek, M Peressi, C Africh, ...
Nano Letters 15 (1), 56-62, 2015
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