GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis, ML Reed, ... Applied physics letters 89 (1), 2006 | 142 | 2006 |
Device technologies for RF front-end circuits in next-generation wireless communications M Feng, SC Shen, DC Caruth, JJ Huang Proceedings of the IEEE 92 (2), 354-375, 2004 | 138 | 2004 |
Nitride Semiconductor Light-Emitting Diodes (LEDs): Materials, Technologies, and Applications JJ Huang, HC Kuo, SC Shen Woodhead Publishing, 2017 | 111 | 2017 |
Low actuation voltage microelectromechanical device and method of manufacture M Feng, SC Shen US Patent 6,143,997, 2000 | 105 | 2000 |
Performance of deep ultraviolet GaN avalanche photodiodes grown by MOCVD SC Shen, Y Zhang, D Yoo, JB Limb, JH Ryou, PD Yoder, RD Dupuis IEEE Photonics Technology Letters 19 (21), 1744-1746, 2007 | 100 | 2007 |
Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrate Z Lochner, TT Kao, YS Liu, XH Li, M Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 102 (10), 2013 | 97 | 2013 |
Low-threshold stimulated emission at 249 nm and 256 nm from AlGaN-based multiple-quantum-well lasers grown on sapphire substrates XH Li, T Detchprohm, TT Kao, MM Satter, SC Shen, P Douglas Yoder, ... Applied Physics Letters 105 (14), 2014 | 94 | 2014 |
Low actuation voltage RF MEMS switches with signal frequencies from 0.25 GHz to 40 GHz SC Shen, M Feng International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999 | 94 | 1999 |
Low-noise GaN ultraviolet pin photodiodes on GaN substrates Y Zhang, SC Shen, HJ Kim, S Choi, JH Ryou, RD Dupuis, B Narayan Applied Physics Letters 94 (22), 2009 | 91 | 2009 |
Demonstration of transverse-magnetic deep-ultraviolet stimulated emission from AlGaN multiple-quantum-well lasers grown on a sapphire substrate XH Li, TT Kao, MM Satter, YO Wei, S Wang, H Xie, SC Shen, PD Yoder, ... Applied Physics Letters 106 (4), 2015 | 63 | 2015 |
Electromagnetic energy controlled low actuation voltage microelectromechanical switch M Feng, SC Shen US Patent 6,717,496, 2004 | 62 | 2004 |
Thermal characterization of gallium nitride pin diodes J Dallas, G Pavlidis, B Chatterjee, JS Lundh, M Ji, J Kim, T Kao, ... Applied Physics Letters 112 (7), 2018 | 59 | 2018 |
Growth of high‐quality AlN layers on sapphire substrates at relatively low temperatures by metalorganic chemical vapor deposition XH Li, S Wang, H Xie, YO Wei, TT Kao, MM Satter, SC Shen, ... physica status solidi (b) 252 (5), 1089-1095, 2015 | 56 | 2015 |
High performance GaN pin rectifiers grown on free-standing GaN substrates JB Limb, D Yoo, JH Ryou, W Lee, SC Shen, RD Dupuis Electronics Letters 42 (22), 1313-1314, 2006 | 51 | 2006 |
Effects of a step-graded AlxGa1− xN electron blocking layer in InGaN-based laser diodes Y Zhang, TT Kao, J Liu, Z Lochner, SS Kim, JH Ryou, RD Dupuis, ... Journal of Applied Physics 109 (8), 2011 | 50 | 2011 |
Sub-250 nm low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors TT Kao, YS Liu, M Satter, XH Li, Z Lochner, P Douglas Yoder, ... Applied Physics Letters 103 (21), 2013 | 46 | 2013 |
Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers MM Satter, HJ Kim, Z Lochner, JH Ryou, SC Shen, RD Dupuis, PD Yoder IEEE Journal of Quantum Electronics 48 (5), 703-711, 2012 | 44 | 2012 |
Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition XH Li, YO Wei, S Wang, H Xie, TT Kao, MM Satter, SC Shen, PD Yoder, ... Journal of Crystal Growth 414, 76-80, 2015 | 42 | 2015 |
Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes RD Dupuis, JH Ryou, SC Shen, PD Yoder, Y Zhang, HJ Kim, S Choi, ... Journal of Crystal Growth 310 (23), 5217-5222, 2008 | 42 | 2008 |
Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors T Detchprohm, YS Liu, K Mehta, S Wang, H Xie, TT Kao, SC Shen, ... Applied Physics Letters 110 (1), 2017 | 40 | 2017 |