Implementation of nanoscale circuits using dual metal gate engineered nanowire MOSFET with high-k dielectrics for low power applications JC Pravin, D Nirmal, P Prajoon, J Ajayan Physica E: Low-dimensional systems and nanostructures 83, 95-100, 2016 | 104 | 2016 |
Analysis of nanometer-scale InGaAs/InAs/InGaAs composite channel MOSFETs using high-K dielectrics for high speed applications J Ajayan, D Nirmal, P Prajoon, JC Pravin AEU-International Journal of Electronics and Communications 79, 151-157, 2017 | 77 | 2017 |
InP high electron mobility transistors for submillimetre wave and terahertz frequency applications: A review J Ajayan, D Nirmal, T Ravichandran, P Mohankumar, P Prajoon, ... AEU-International Journal of Electronics and Communications 94, 199-214, 2018 | 69 | 2018 |
The influence of high-k passivation layer on breakdown voltage of Schottky AlGaN/GaN HEMTs BK Jebalin, AS Rekh, P Prajoon, NM Kumar, D Nirmal Microelectronics Journal 46 (12), 1387-1391, 2015 | 53 | 2015 |
Current collapse modeling in AlGaN/GaN HEMT using small signal equivalent circuit for high power application D Nirmal, L Arivazhagan, ASA Fletcher, J Ajayan, P Prajoon Superlattices and Microstructures 113, 810-820, 2018 | 51 | 2018 |
Unique model of polarization engineered AlGaN/GaN based HEMTs for high power applications BK Jebalin, AS Rekh, P Prajoon, D Godwinraj, NM Kumar, D Nirmal Superlattices and Microstructures 78, 210-223, 2015 | 44 | 2015 |
Improved RF and DC performance in AlGaN/GaN HEMT by P-type doping in GaN buffer for millimetre-wave applications L Arivazhagan, D Nirmal, D Godfrey, J Ajayan, P Prajoon, ASA Fletcher, ... AEU-International Journal of Electronics and Communications 108, 189-194, 2019 | 43 | 2019 |
Handbook for III-V high electron mobility transistor technologies D Nirmal, J Ajayan CRC Press, 2019 | 37 | 2019 |
A new drain current model for a dual metal junctionless transistor for enhanced digital circuit performance JC Pravin, D Nirmal, P Prajoon, MA Menokey IEEE Transactions on Electron Devices 63 (9), 3782-3789, 2016 | 37 | 2016 |
Investigation of 6T SRAM memory circuit using high-k dielectrics based nano scale junctionless transistor JC Pravin, D Nirmal, P Prajoon, NM Kumar, J Ajayan Superlattices and Microstructures 104, 470-476, 2017 | 35 | 2017 |
A review of blue light emitting diodes for future solid state lighting and visible light communication applications M Manikandan, D Nirmal, J Ajayan, P Mohankumar, P Prajoon, ... Superlattices and Microstructures 136, 106294, 2019 | 29 | 2019 |
Investigation of breakdown performance in = 20 nm novel asymmetric InP HEMTs for future high-speed high-power applications J Ajayan, T Ravichandran, P Prajoon, JC Pravin, D Nirmal Journal of Computational Electronics 17 (1), 265-272, 2018 | 28 | 2018 |
Investigation of DC-RF and breakdown behaviour in Lg= 20 nm novel asymmetric GaAs MHEMTs for future submillimetre wave applications J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ... AEU-International Journal of Electronics and Communications 84, 387-393, 2018 | 26 | 2018 |
Impact of AlInN Back-Barrier Over AlGaN/GaN MOS-HEMT With HfO₂ Dielectric Using Cubic Spline Interpolation Technique V Sandeep, JC Pravin, AR Babu, P Prajoon IEEE Transactions on Electron Devices 67 (9), 3558-3563, 2020 | 19 | 2020 |
A modified ABC model in InGaN MQW LED using compositionally step graded Alternating Barrier for efficiency improvement P Prajoon, D Nirmal, MA Menokey, JC Pravin Superlattices and Microstructures 96, 155-163, 2016 | 19 | 2016 |
Nanoscale high-k dielectrics for junctionless nanowire transistor for drain current analysis JC Pravin, P Prajoon, FP Nesamania, G Srikesh, P Senthil Kumar, ... Journal of Electronic Materials 47, 2679-2686, 2018 | 17 | 2018 |
Temperature-dependent efficiency droop analysis of InGaN MQW light-emitting diode with modified ABC model P Prajoon, D Nirmal, MA Menokey, JC Pravin Journal of Computational Electronics 15, 1511-1520, 2016 | 15 | 2016 |
Efficiency enhancement of InGaN MQW LED using compositionally step graded InGaN barrier on SiC substrate P Prajoon, D Nirmal, MA Menokey, JC Pravin Journal of Display Technology 12 (10), 1117-1121, 2016 | 12 | 2016 |
Investigation of DC and RF performance of novel MOSHEMT on silicon substrate for future submillimetre wave applications J Ajayan, T Ravichandran, P Mohankumar, P Prajoon, JC Pravin, ... Semiconductors 52, 1991-1997, 2018 | 11 | 2018 |
Numerical investigation of traps and optical response in III-V nitride quantum LED M Manikandan, D Nirmal, J Ajayan, L Arivazhagan, P Prajoon, ... optical and quantum electronics 52, 1-9, 2020 | 9 | 2020 |