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Matteo Farronato
Matteo Farronato
Postdoctoral researcher, Politecnico di Milano
Verified email at polimi.it
Title
Cited by
Cited by
Year
Hybrid 2D–CMOS microchips for memristive applications
K Zhu, S Pazos, F Aguirre, Y Shen, Y Yuan, W Zheng, O Alharbi, ...
Nature 618 (7963), 57-62, 2023
712023
Neuromorphic motion detection and orientation selectivity by volatile resistive switching memories
W Wang, E Covi, A Milozzi, M Farronato, S Ricci, C Sbandati, G Pedretti, ...
Advanced Intelligent Systems 3 (4), 2000224, 2021
492021
In-memory computing with emerging memory devices: Status and outlook
P Mannocci, M Farronato, N Lepri, L Cattaneo, A Glukhov, Z Sun, ...
APL Machine Learning 1 (1), 2023
302023
Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part I: Experimental characterization
E Covi, W Wang, YH Lin, M Farronato, E Ambrosi, D Ielmini
IEEE Transactions on Electron Devices 68 (9), 4335-4341, 2021
302021
Switching dynamics of Ag-based filamentary volatile resistive switching devices—Part II: Mechanism and modeling
W Wang, E Covi, YH Lin, E Ambrosi, A Milozzi, C Sbandati, M Farronato, ...
IEEE Transactions on Electron Devices 68 (9), 4342-4349, 2021
252021
Reservoir Computing with Charge‐Trap Memory Based on a MoS2 Channel for Neuromorphic Engineering
M Farronato, P Mannocci, M Melegari, S Ricci, CM Compagnoni, D Ielmini
Advanced Materials 35 (37), 2205381, 2023
232023
Memtransistor Devices Based on MoS2 Multilayers with Volatile Switching due to Ag Cation Migration
M Farronato, M Melegari, S Ricci, S Hashemkhani, A Bricalli, D Ielmini
Advanced Electronic Materials 8 (8), 2101161, 2022
232022
Forming‐Free Resistive Switching Memory Crosspoint Arrays for In‐Memory Machine Learning
S Ricci, P Mannocci, M Farronato, S Hashemkhani, D Ielmini
Advanced Intelligent Systems 4 (8), 2200053, 2022
132022
In-memory computing for machine learning and deep learning
N Lepri, A Glukhov, L Cattaneo, M Farronato, P Mannocci, D Ielmini
IEEE Journal of the Electron Devices Society, 2023
72023
Redox memristors with volatile threshold switching behavior for neuromorphic computing
YH Wang, TC Gong, YX Ding, Y Li, W Wang, ZA Chen, N Du, E Covi, ...
Journal of Electronic Science and Technology 20 (4), 100177, 2022
52022
Low-current, highly linear synaptic memory device based on MoS2 transistors for online training and inference
M Farronato, M Melegari, S Ricci, S Hashemkani, CM Compagnoni, ...
2022 IEEE 4th International Conference on Artificial Intelligence Circuits …, 2022
52022
In-Memory Computing with Crosspoint Resistive Memory Arrays for Machine Learning
S Ricci, P Mannocci, M Farronato, D Ielmini
Annual Meeting of the Italian Electronics Society, 35-40, 2022
12022
Programming Characteristics of Electrochemical Random Access Memory (ECRAM)—Part I: Experimental Study
M Porzani, S Ricci, M Farronato, D Ielmini
IEEE Transactions on Electron Devices, 2024
2024
Development of Crosspoint Memory Arrays for Neuromorphic Computing
S Ricci, P Mannocci, M Farronato, A Milozzi, D Ielmini
Special Topics in Information Technology, 65-74, 2024
2024
Memtransistor devices based on MoS2 for neuromorphic computing
M Farronato, P Mannocci, S Ricci, A Bricalli, M Melegari, ...
Proceedings of Neuromorphic Materials, Devices, Circuits and Systems …, 2023
2023
Neuromorphic devices based on 2D materials and their applications in computing
M Farronato
2022
Development of innovative synaptic devices for the online training of neural networks
M FARRONATO
Politecnico di Milano, 2018
2018
RECENT PROGRESSES OF IN-MEMORY COMPUTING: MATERIALS, DEVICES AND ARCHITECTURES
D Ielmini, F Sancandi, M Farronato, S Hashemkhani, S Ricci, M Baldo, ...
BOOK OF ABSTRACTS, 23, 0
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Articles 1–18