| The relevance of trapped charge for leakage and random telegraph noise phenomena S Vecchi, P Pavan, FM Puglisi 2022 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2022 | 9 | 2022 |
| Local electric field perturbations due to trapping mechanisms at defects: What random telegraph noise reveals S Vecchi, P Pavan, FM Puglisi Journal of Applied Physics 133 (11), 2023 | 6 | 2023 |
| The impact of electrostatic interactions between defects on the characteristics of random telegraph noise S Vecchi, P Pavan, FM Puglisi IEEE Transactions on Electron Devices 69 (12), 6991-6998, 2022 | 6 | 2022 |
| Defects motion as the key source of random telegraph noise instability in hafnium oxide S Vecchi, P Pavan, FM Puglisi ESSDERC 2022-IEEE 52nd European Solid-State Device Research Conference …, 2022 | 4 | 2022 |
| The role of defects and interface degradation on ferroelectric HZO capacitors aging L Benatti, S Vecchi, M Pesic, FM Puglisi 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 2 | 2023 |
| A unified framework to explain random telegraph noise complexity in MOSFETs and RRAMs S Vecchi, P Pavan, FM Puglisi 2023 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2023 | 2 | 2023 |
| Impedance spectroscopy of ferroelectric capacitors and ferroelectric tunnel junctions L Benatti, S Vecchi, FM Puglisi 2022 IEEE International Integrated Reliability Workshop (IIRW), 1-6, 2022 | 2 | 2022 |
| The Major Effect of Trapped Charge on Dielectric Breakdown Dynamics and Lifetime Estimation S Vecchi, A Padovani, P Pavan, FM Puglisi 2023 IEEE International Integrated Reliability Workshop (IIRW), 1-7, 2023 | 1 | 2023 |
| Linking the intrinsic electrical response of ferroelectric devices to material properties by means of impedance spectroscopy L Benatti, S Vecchi, FM Puglisi IEEE Transactions on Device and Materials Reliability, 2023 | 1 | 2023 |
| From Accelerated to Operating Conditions: How Trapped Charge Impacts on TDDB in SiO2 and HfO2 Stacks S Vecchi, A Padovani, P Pavan, FM Puglisi IEEE Transactions on Device and Materials Reliability, 2024 | | 2024 |
| SPECIAL SECTION ON IIRW L Benatti, S Vecchi, FM Puglisi | | |
