| Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current J Lagowski, A Savtchouk, MD Wilson US Patent 6,597,193, 2003 | 120 | 2003 |
| Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current A Savtchouk, J Lagowski, J D'amico, MD Wilson, LL Jastrzebski US Patent 6,680,621, 2004 | 114 | 2004 |
| COCOS (corona oxide characterization of semiconductor) non-contact metrology for gate dielectrics M Wilson, J Lagowski, L Jastrzebski, A Savtchouk, V Faifer AIP Conference Proceedings 550 (1), 220-225, 2001 | 100 | 2001 |
| Method for measuring stress induced leakage current and gate dielectric integrity using corona discharge J Lagowski, M Wilson, A Savtchouk US Patent 6,538,462, 2003 | 61 | 2003 |
| Measurement of the interface trap charge in an oxide semiconductor layer interface J Lagowski, P Edelman, MD Wilson US Patent 6,037,797, 2000 | 61 | 2000 |
| Extremely low surface recombination velocities on low‐resistivity n‐type and p‐type crystalline silicon using dynamically deposited remote plasma silicon nitride films S Duttagupta, F Lin, M Wilson, MB Boreland, B Hoex, AG Aberle Progress in Photovoltaics: Research and Applications 22 (6), 641-647, 2014 | 60 | 2014 |
| The present status and recent advancements in corona-Kelvin non-contact electrical metrology of dielectrics for IC-manufacturing M Wilson, D Marinskiy, A Byelyayev, J D'Amico, A Findlay, L Jastrzebski, ... ECS Transactions 3 (3), 3, 2006 | 59 | 2006 |
| Measurement of different mobile ion concentrations in the oxide layer of a semiconductor wafer LL Jastrzebski, A Savtchouk, MD Wilson US Patent 6,569,691, 2003 | 58 | 2003 |
| Drift characteristics of mobile ions in SiNx films and solar cells M Wilson, A Savtchouk, P Edelman, D Marinskiy, J Lagowski Solar Energy Materials and Solar Cells 142, 102-106, 2015 | 46 | 2015 |
| Simple and versatile UV-ozone oxide for silicon solar cell applications S Bakhshi, N Zin, H Ali, M Wilson, D Chanda, KO Davis, WV Schoenfeld Solar Energy Materials and Solar Cells 185, 505-510, 2018 | 33 | 2018 |
| Accelerated light-induced degradation (ALID) for monitoring of defects in PV silicon wafers and solar cells M Wilson, P Edelman, A Savtchouk, J D’Amico, A Findlay, J Lagowski Journal of electronic materials 39, 642-647, 2010 | 31 | 2010 |
| COCOS (corona oxide characterization of semiconductor) metrology: Physical principles and applications M Wilson, J Lagowski, A Savtchouk, L Jastrzebski, J D'Amico Gate Dielectric Integrity: Material, Process, and Tool Qualification, 2000 | 29 | 2000 |
| Influence of precursor gas ratio and firing on silicon surface passivation by APCVD aluminium oxide KO Davis, K Jiang, M Wilson, C Demberger, H Zunft, H Haverkamp, ... physica status solidi (RRL)–Rapid Research Letters 7 (11), 942-945, 2013 | 28 | 2013 |
| Non-contact CV measurements of ultra thin dielectrics P Edelman, A Savtchouk, M Wilson, J D'Amico, JN Kochey, D Marinskiy, ... The European Physical Journal Applied Physics 27 (1-3), 495-498, 2004 | 28 | 2004 |
| QSS-μPCD measurement of lifetime in silicon wafers: advantages and new applications M Wilson, A Savtchouk, J Lagowski, K Kis-Szabo, F Korsos, A Toth, ... Energy Procedia 8, 128-134, 2011 | 26 | 2011 |
| Multifunction metrology platform for photovoltaics M Wilson, J D'amico, A Savtchouk, P Edelman, A Findlay, L Jastrzebski, ... 2011 37th IEEE Photovoltaic Specialists Conference, 001748-001753, 2011 | 23 | 2011 |
| Improved QSS-μPCD measurement with quality of decay control: Correlation with steady-state carrier lifetime M Wilson, P Edelman, J Lagowski, S Olibet, V Mihailetchi Solar Energy Materials and Solar Cells 106, 66-70, 2012 | 20 | 2012 |
| Influence of surface preparation and cleaning on the passivation of boron diffused silicon surfaces for high efficiency photovoltaics H Ali, A Moldovan, S Mack, M Wilson, WV Schoenfeld, KO Davis Thin Solid Films 636, 412-418, 2017 | 19 | 2017 |
| Importance of defect photoionization in silicon-rich SiNx dielectrics for high PID resistance M Wilson, A Savthouck, J D'Amico, J Lagowski, S Schmitt, A Schneider, ... 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 0218-0222, 2013 | 17 | 2013 |
| Non-contact charge-voltage method for dielectric characterization on small test areas of IC product wafers P Edelman, D Marinskiy, C Almeida, JN Kochey, A Byelyayev, M Wilson, ... Materials science in semiconductor processing 9 (1-3), 252-256, 2006 | 16 | 2006 |
Dmitriy MarinskiySemilab SDIVerified email at semilabsdi.com
