Impermeable barrier films and protective coatings based on reduced graphene oxide Y Su, VG Kravets, SL Wong, J Waters, AK Geim, RR Nair Nature communications 5 (1), 4843, 2014 | 671 | 2014 |
Twist-controlled resonant tunnelling in graphene/boron nitride/graphene heterostructures A Mishchenko, JS Tu, Y Cao, RV Gorbachev, JR Wallbank, ... Nature nanotechnology 9 (10), 808-813, 2014 | 494 | 2014 |
Spatially resolved electronic structures of atomically precise armchair graphene nanoribbons H Huang, D Wei, J Sun, SL Wong, YP Feng, AHC Neto, ATS Wee Scientific reports 2 (1), 983, 2012 | 303 | 2012 |
Artificial synapses based on multiterminal memtransistors for neuromorphic application L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ... Advanced Functional Materials 29 (25), 1901106, 2019 | 217 | 2019 |
CVD Growth of MoS2‐based Two‐dimensional Materials HF Liu, SL Wong, DZ Chi Chemical Vapor Deposition 21 (10-11-12), 241-259, 2015 | 193 | 2015 |
Functionalization of 2D transition metal dichalcogenides for biomedical applications Z Li, SL Wong Materials Science and Engineering: C 70, 1095-1106, 2017 | 164 | 2017 |
Quasi-free-standing epitaxial graphene on SiC (0001) by fluorine intercalation from a molecular source SL Wong, H Huang, Y Wang, L Cao, D Qi, I Santoso, W Chen, ATS Wee ACS nano 5 (9), 7662-7668, 2011 | 120 | 2011 |
Direct n- to p-Type Channel Conversion in Monolayer/Few-Layer WS2 Field-Effect Transistors by Atomic Nitrogen Treatment B Tang, ZG Yu, L Huang, J Chai, SL Wong, J Deng, W Yang, H Gong, ... ACS nano 12 (3), 2506-2513, 2018 | 116 | 2018 |
Recent progress in chemical vapor deposition growth of two-dimensional transition metal dichalcogenides SL Wong, H Liu, D Chi Progress in Crystal Growth and Characterization of Materials 62 (3), 9-28, 2016 | 91 | 2016 |
Self-selective multi-terminal memtransistor crossbar array for in-memory computing X Feng, S Li, SL Wong, S Tong, L Chen, P Zhang, L Wang, X Fong, D Chi, ... ACS nano 15 (1), 1764-1774, 2021 | 86 | 2021 |
Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier YF Lim, K Priyadarshi, F Bussolotti, PK Gogoi, X Cui, M Yang, J Pan, ... ACS nano 12 (2), 1339-1349, 2018 | 82 | 2018 |
Work function and electron affinity of the fluorine-terminated (100) diamond surface KJ Rietwyk, SL Wong, L Cao, KM O'Donnell, L Ley, ATS Wee, CI Pakes Applied Physics Letters 102 (9), 2013 | 82 | 2013 |
Electronic properties of a 1D intrinsic/p-doped heterojunction in a 2D transition metal dichalcogenide semiconductor Z Song, T Schultz, Z Ding, B Lei, C Han, P Amsalem, T Lin, D Chi, ... ACS nano 11 (9), 9128-9135, 2017 | 77 | 2017 |
Electronic Devices and Circuits Based on Wafer‐Scale Polycrystalline Monolayer MoS2 by Chemical Vapor Deposition L Wang, L Chen, SL Wong, X Huang, W Liao, C Zhu, YF Lim, D Li, X Liu, ... Advanced Electronic Materials 5 (8), 1900393, 2019 | 71 | 2019 |
Energy-gap opening in a Bi (110) nanoribbon induced by edge reconstruction JT Sun, H Huang, SL Wong, HJ Gao, YP Feng, ATS Wee Physical review letters 109 (24), 246804, 2012 | 67 | 2012 |
Atomically resolved imaging of highly ordered alternating fluorinated graphene RJ Kashtiban, MA Dyson, RR Nair, R Zan, SL Wong, Q Ramasse, ... Nature communications 5 (1), 4902, 2014 | 54 | 2014 |
Atomically resolved imaging of highly ordered alternating fluorinated graphene RJ Kashtiban, MA Dyson, RR Nair, R Zan, SL Wong, Q Ramasse, ... Nature communications 5 (1), 4902, 2014 | 54 | 2014 |
Self-assembly of polar phthalocyanine molecules on graphene grown by chemical vapor deposition Y Ogawa, T Niu, SL Wong, M Tsuji, ATS Wee, W Chen, H Ago The Journal of Physical Chemistry C 117 (42), 21849-21855, 2013 | 50 | 2013 |
Single layer MoS2 nanoribbon field effect transistor D Kotekar-Patil, J Deng, SL Wong, CS Lau, KEJ Goh Applied Physics Letters 114 (1), 2019 | 46 | 2019 |
Effect of fluorination on the molecular packing of perfluoropentacene and pentacene ultrathin films on Ag (111) SL Wong, H Huang, YL Huang, YZ Wang, XY Gao, T Suzuki, W Chen, ... The Journal of Physical Chemistry C 114 (20), 9356-9361, 2010 | 44 | 2010 |