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Zitiert von
Zitiert von
Two-dimensional materials and their prospects in transistor electronics
F Schwierz, J Pezoldt, R Granzner
Nanoscale 7 (18), 8261-8283, 2015
Group III nitride and SiC based MEMS and NEMS: materials properties, technology and applications
V Cimalla, J Pezoldt, O Ambacher
Journal of Physics D: Applied Physics 40 (20), 6386, 2007
Nanoelectromechanical devices for sensing applications
V Cimalla, F Niebelschütz, K Tonisch, C Foerster, K Brueckner, I Cimalla, ...
Sensors and Actuators B: Chemical 126 (1), 24-34, 2007
Phase stabilization and phonon properties of single crystalline rhombohedral indium oxide
CY Wang, Y Dai, J Pezoldt, B Lu, T Kups, V Cimalla, O Ambacher
Crystal growth and Design 8 (4), 1257-1260, 2008
Phase selective growth and properties of rhombohedral and cubic indium oxide
CY Wang, V Cimalla, H Romanus, T Kups, G Ecke, T Stauden, M Ali, ...
Applied physics letters 89 (1), 011904, 2006
Growth of cubic InN on -plane sapphire
V Cimalla, J Pezoldt, G Ecke, R Kosiba, O Ambacher, L Spieß, G Teichert, ...
Applied physics letters 83 (17), 3468-3470, 2003
Densification of thin aluminum oxide films by thermal treatments
V Cimalla, M Baeumler, L Kirste, M Prescher, B Christian, T Passow, ...
Materials Sciences and Applications 5 (08), 628, 2014
Growth of thin β-SiC layers by carbonization of Si surfaces by rapid thermal processing
V Cimalla, KV Karagodina, J Pezoldt, G Eichhorn
Materials Science and Engineering: B 29 (1-3), 170-175, 1995
Nanomechanics of single crystalline tungsten nanowires
V Cimalla, CC Röhlig, J Pezoldt, M Niebelschütz, O Ambacher, ...
Journal of Nanomaterials 2008, 2008
Effect of dislocations on electrical and electron transport properties of InN thin films. I. Strain relief and formation of a dislocation network
V Lebedev, V Cimalla, J Pezoldt, M Himmerlich, S Krischok, JA Schaefer, ...
Journal of Applied Physics 100 (9), 094902, 2006
Preparation of single phase tungsten carbide by annealing of sputtered tungsten-carbon layers
H Romanus, V Cimalla, JA Schaefer, L Spieß, G Ecke, J Pezoldt
Thin Solid Films 359 (2), 146-149, 2000
Cubic GaN epilayers grown by molecular beam epitaxy on thin β-SiC/Si (001) substrates
DJ As, T Frey, D Schikora, K Lischka, V Cimalla, J Pezoldt, R Goldhahn, ...
Applied Physics Letters 76 (13), 1686-1688, 2000
Electrical characterization of SiC/Si heterostructures with Ge-modified interfaces
J Pezoldt, C Förster, P Weih, P Masri
Applied surface science 184 (1-4), 79-83, 2001
Sputtering effects in hexagonal silicon carbide
J Pezoldt, B Stottko, G Kupris, G Ecke
Materials Science and Engineering: B 29 (1-3), 94-98, 1995
Micro‐and nano‐electromechanical resonators based on SiC and group III‐nitrides for sensor applications
K Brueckner, F Niebelschuetz, K Tonisch, C Foerster, V Cimalla, ...
physica status solidi (a) 208 (2), 357-376, 2011
High-frequency performance of GaN high-electron mobility transistors on 3C-SiC/Si substrates with Au-free ohmic contacts
W Jatal, U Baumann, K Tonisch, F Schwierz, J Pezoldt
IEEE Electron device letters 36 (2), 123-125, 2014
Initial stages in the carbonization of (111) Si by solid-source molecular beam epitaxy
V Cimalla, T Stauden, G Ecke, F Scharmann, G Eichhorn, J Pezoldt, ...
Applied physics letters 73 (24), 3542-3544, 1998
Broadband tunable, polarization-selective and directional emission of (6, 5) carbon nanotubes coupled to plasmonic crystals
Y Zakharko, A Graf, SP Schießl, B Hähnlein, J Pezoldt, MC Gather, ...
Nano letters 16 (5), 3278-3284, 2016
Effect of nanoscale surface morphology on the phase stability of 3C-AlN films on Si (111)
V Lebedev, V Cimalla, U Kaiser, C Foerster, J Pezoldt, J Biskupek, ...
Journal of applied physics 97 (11), 114306, 2005
The estimation of sputtering yields for SiC and Si
G Ecke, R Kosiba, V Kharlamov, Y Trushin, J Pezoldt
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2002
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