David L. Kencke
Title
Cited by
Cited by
Year
Biasing scheme of floating unselected wordlines and bitlines of a diode-based memory array
D Xu, TA Lowrey, DL Kencke
US Patent 6,462,984, 2002
1912002
Floating body cell with independently-controlled double gates for high density memory
I Ban, UE Avci, U Shah, CE Barns, DL Kencke, P Chang
2006 International Electron Devices Meeting, 1-4, 2006
1272006
The impact of thermal boundary resistance in phase-change memory devices
JP Reifenberg, DL Kencke, KE Goodson
IEEE Electron Device Letters 29 (10), 1112-1114, 2008
1232008
Floating body memory cell having gates favoring different conductivity type regions
PLD Chang, UE Avci, DL Kencke, I Ban
US Patent 8,217,435, 2012
952012
Floating gate transistor having buried strained silicon germanium channel layer
DL Kencke, SK Banerjee
US Patent 6,313,486, 2001
912001
Two-dimensional bandgap engineering in a novel Si-SiGe pMOSFET with enhanced device performance and scalability
Q Ouyang, XD Chen, S Mudanai, DL Kencke, X Wang, AF Tasch, ...
2000 International Conference on Simulation Semiconductor Processes and …, 2000
662000
MRAM as embedded non-volatile memory solution for 22FFL FinFET technology
O Golonzka, JG Alzate, U Arslan, M Bohr, P Bai, J Brockman, B Buford, ...
2018 IEEE International Electron Devices Meeting (IEDM), 18.1. 1-18.1. 4, 2018
622018
Perpendicular MTJ stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
K Oguz, ML Doczy, B Doyle, U Shah, DL Kencke, RG MOJARAD, ...
US Patent 8,836,056, 2014
572014
Substrate-current-induced hot electron (SCIHE) injection: A new convergence scheme for flash memory
CY Hu, DL Kencke, SK Banerjee, R Richart, B Bandyopadhyay, B Moore, ...
Proceedings of International Electron Devices Meeting, 283-286, 1995
501995
Random charge effects for PMOS NBTI in ultra-small gate area devices
M Agostinelli, S Pae, W Yang, C Prasad, D Kencke, S Ramey, E Snyder, ...
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005
462005
Vertical channel floating gate transistor having silicon germanium channel layer
DL Kencke, SK Banerjee
US Patent 6,313,487, 2001
432001
The role of interfaces in damascene phase-change memory
DL Kencke, IV Karpov, BG Johnson, SJ Lee, DC Kau, SJ Hudgens, ...
2007 IEEE International Electron Devices Meeting, 323-326, 2007
362007
Challenges for on-chip optical interconnects
KC Cadien, MR Reshotko, BA Block, AM Bowen, DL Kencke, P Davids
Optoelectronic Integration on Silicon II 5730, 133-143, 2005
322005
Band alignments in sidewall strained Si/strained SiGe heterostructures
X Wang, DL Kencke, KC Liu, LF Register, SK Banerjee
Solid-State Electronics 46 (12), 2021-2025, 2002
322002
Bandgap engineering in deep submicron vertical pMOSFETs
Q Ouyang, XD Chen, S Mudanai, DL Kencke, AF Tasch, SK Banerjee
58th DRC. Device Research Conference. Conference Digest (Cat. No. 00TH8526 …, 2000
322000
Floating body cell (FBC) memory for 16-nm technology with low variation on thin silicon and 10-nm BOX
UE Avci, I Ban, DL Kencke, PLD Chang
2008 IEEE International SOI Conference, 29-30, 2008
312008
A novel sidewall strained-Si channel nMOSFET
KC Liu, X Wang, E Quinones, X Chen, XD Chen, D Kencke, ...
International Electron Devices Meeting 1999. Technical Digest (Cat. No …, 1999
311999
A convergence scheme for over-erased flash EEPROM's using substrate-bias-enhanced hot electron injection
CY Hu, DL Kencke, SK Banerjee, R Richart, B Bandyopadhyay, B Moore, ...
IEEE Electron Device Letters 16 (11), 500-502, 1995
301995
A scaled floating body cell (FBC) memory with high-k+ metal gate on thin-silicon and thin-BOX for 16-nm technology node and beyond
I Ban, UE Avci, DL Kencke, PLD Chang
2008 Symposium on VLSI Technology, 92-93, 2008
282008
Asymmetric channel doping for improved memory operation for floating body cell (FBC) memory
I Ban, AE Uygar, DL Kencke
US Patent 7,646,071, 2010
262010
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