| A Modeling Framework for NBTI Degradation Under Dynamic Voltage and Frequency Scaling N Parihar, N Goel, A Chaudhary, S Mahapatra IEEE, 2016 | 65 | 2016 |
| Resolution of disputes concerning the physical mechanism and DC/AC stress/recovery modeling of Negative Bias Temperature Instability (NBTI) in p-MOSFETs N Parihar, U Sharma, S Mukhopadhyay, N Goel, A Chaudhary, R Rao, ... Reliability Physics Symposium (IRPS), 2017 IEEE International, XT-1.1-XT-1.11, 2017 | 35 | 2017 |
| Consistency of the Two Component Composite Modeling Framework for NBTI in Large and Small Area p-MOSFETs A Chaudhary, B Fernandez, N Parihar, S Mahapatra IEEE Transactions on Electron Devices 64 (1), 256-263, 2017 | 29 | 2017 |
| Characterization Methods for BTI Degradation and Associated Gate Insulator Defects S Mahapatra, N Goel, A Chaudhary, K Joshi, S Mukhopadhyay Fundamentals of Bias Temperature Instability in MOS Transistors, 43-92, 2016 | 29 | 2016 |
| TCAD-Based Predictive NBTI Framework for Sub-20-nm Node Device Design Considerations S Mishra, HY Wong, R Tiwari, A Chaudhary, R Rao, V Moroz, ... IEEE Transactions on Electron Devices, 2016 | 28 | 2016 |
| A physical and SPICE mobility degradation analysis for NBTI A Chaudhary, S Mahapatra Electron Devices, IEEE Transactions on 60 (7), 2096-2103, 2013 | 26 | 2013 |
| Predictive TCAD for NBTI stress-recovery in various device architectures and channel materials S Mishra, HY Wong, R Tiwari, A Chaudhary, N Parihar, R Rao, S Motzny, ... Reliability Physics Symposium (IRPS), 2017 IEEE International, 6A-3.1-6A-3.8, 2017 | 18 | 2017 |
| Time dependent variability in RMG-HKMG FinFETs: impact of extraction scheme on stochastic NBTI A Chaudhary, B Kaczer, PJ Roussel, T Chiarella, N Horiguchi, ... Reliability Physics Symposium (IRPS), 2015 IEEE International, 3B. 4.1-3B. 4.8, 2015 | 14 | 2015 |
| A Comparative Analysis of NBTI Variability and TDDS in GF HKMG Planar p-MOSFETs and RMG HKMG p-FinFETs N Parihar, R Anandkrishnan, A Chaudhary, S Mahapatra IEEE Transactions on Electron Devices, 2019 | 10 | 2019 |
| Physical Mechanism of BTI Degradation—Modeling of Process and Material Dependence S Mahapatra, K Joshi, S Mukhopadhyay, A Chaudhary, N Goel Fundamentals of Bias Temperature Instability in MOS Transistors, 127-179, 2016 | 9 | 2016 |
| A BTI analysis tool (BAT) to simulate p-MOSFET ageing under diverse experimental conditions S Mahapatra, N Parihar, S Mishra, B Fernandez, A Chaudhary Electron Devices Technology and Manufacturing Conference (EDTM), 2017 IEEE …, 2017 | 3 | 2017 |
| NBTI Induced Mobility Degradation-Models for TCAD and SPICE Applications A Chaudhary, S Mahapatra SSDM 2012, 0 | | |
