| Comparison of InGaN-based LEDs grown on conventional sapphire and cone-shape-patterned sapphire substrate JH Lee, DY Lee, BW Oh, JH Lee IEEE Transactions on Electron Devices 57 (1), 157-163, 2010 | 130 | 2010 |
| Stress reduction and enhanced extraction efficiency of GaN-based LED grown on cone-shape-patterned sapphire JH Lee, JT Oh, YC Kim, JH Lee IEEE Photonics Technology Letters 20 (18), 1563-1565, 2008 | 128 | 2008 |
| High-performance GaN-based nanochannel FinFETs with/without AlGaN/GaN heterostructure KS Im, CH Won, YW Jo, JH Lee, M Bawedin, S Cristoloveanu, JH Lee IEEE Transactions on Electron Devices 60 (10), 3012-3018, 2013 | 124 | 2013 |
| Vertical GaN-based LED and method of manufacturing the same JH Lee, BW Oh, HS Choi, JT Oh, SB Choi, SY Lee US Patent 7,436,001, 2008 | 124 | 2008 |
| Nitride semiconductor light emitting device JH Lee, JW Lee, HK Kim, YC Kim, Samsung Electro-Mechanics Co., Ltd. US Patent 7,470,938, 2008 | 103 | 2008 |
| Method of manufacturing vertical gallium nitride based light emitting diode JH Lee, JH Lee, HI Cho, DK Kim, JC Ro US Patent 8,361,816, 2013 | 91 | 2013 |
| Nitride semiconductor light emitting diode having mesh DBR reflecting layer JH Lee, IE Kim, YC Kim, HK Kim, MH Kong US Patent 7,648,849, 2010 | 70 | 2010 |
| Temperature dependence of current-voltage characteristics of Ni–AlGaN/GaN Schottky diodes W Lim, JH Jeong, JH Lee, SB Hur, JK Ryu, KS Kim, TH Kim, SY Song, ... Applied Physics Letters 97 (24), 2010 | 67 | 2010 |
| Heterojunction-free GaN nanochannel FinFETs with high performance KS Im, YW Jo, JH Lee, S Cristoloveanu, JH Lee IEEE electron device letters 34 (3), 381-383, 2013 | 66 | 2013 |
| Analysis of the reverse leakage current in AlGaN/GaN Schottky barrier diodes treated with fluorine plasma W Jin Ha, S Chhajed, S Jae Oh, S Hwang, J Kyu Kim, JH Lee, KS Kim Applied Physics Letters 100 (13), 2012 | 61 | 2012 |
| Enhancement of InGaN-based vertical LED with concavely patterned surface using patterned sapphire substrate JH Lee, JT Oh, SB Choi, YC Kim, HI Cho, JH Lee IEEE Photonics Technology Letters 20 (5), 345-347, 2008 | 56 | 2008 |
| Fabrication of AlGaN/GaN Ω-shaped nanowire fin-shaped FETs by a top-down approach KS Im, V Sindhuri, YW Jo, DH Son, JH Lee, S Cristoloveanu, JH Lee Applied Physics Express 8 (6), 066501, 2015 | 51 | 2015 |
| AlGaN/GaN-based lateral-type Schottky barrier diode with very low reverse recovery charge at high temperature JH Lee, C Park, KS Im, JH Lee IEEE transactions on electron devices 60 (10), 3032-3039, 2013 | 46 | 2013 |
| Spatial correlation between optical properties and defect formation in GaN thin films laterally overgrown on cone-shaped patterned sapphire substrates KS Lee, HS Kwack, JS Hwang, TM Roh, YH Cho, JH Lee, YC Kim, ... Journal of Applied Physics 107 (10), 2010 | 44 | 2010 |
| Characteristics of GaN and AlGaN/GaN FinFETs KS Im, HS Kang, JH Lee, SJ Chang, S Cristoloveanu, M Bawedin, JH Lee Solid-state electronics 97, 66-75, 2014 | 42 | 2014 |
| High-electron-mobility transistor JH Lee, C Park, N Lee US Patent 9,269,790, 2016 | 39 | 2016 |
| Highly sensitive AlGaN/GaN diode-based hydrogen sensors using platinum nanonetworks H Kim, W Lim, JH Lee, SJ Pearton, F Ren, S Jang Sensors and Actuators B: Chemical 164 (1), 64-68, 2012 | 39 | 2012 |
| Reduction of current collapse in AlGaN/GaN HFETs using AlN interfacial layer JS Lee, JW Kim, JH Lee, CS Kim, JE Oh, MW Shin Electronics Letters 39 (9), 1, 2003 | 39 | 2003 |
| Nitride semiconductor light emitting diode and method of manufacturing the same J Lee, I Kim, Y Kim, H Kim, M Kong US Patent App. 11/064,968, 2006 | 37 | 2006 |
| 840 V/6 A-AlGaN/GaN Schottky barrier diode with bonding pad over active structure prepared on sapphire substrate JH Lee, JK Yoo, HS Kang, JH Lee IEEE electron device letters 33 (8), 1171-1173, 2012 | 36 | 2012 |
