| Three-terminal ferroelectric synapse device with concurrent learning function for artificial neural networks Y Nishitani, Y Kaneko, M Ueda, T Morie, E Fujii Journal of Applied Physics 111 (12), 2012 | 214 | 2012 |
| Ferroelectric artificial synapses for recognition of a multishaded image Y Kaneko, Y Nishitani, M Ueda IEEE Transactions on Electron Devices 61 (8), 2827-2833, 2014 | 147 | 2014 |
| Nonvolatile memory using epitaxially grown composite-oxide-film technology Y Kato, Y Kaneko, H Tanaka, Y Shimada Japanese Journal of applied physics 47 (4S), 2719, 2008 | 72 | 2008 |
| Silica gel solid nanocomposite electrolytes with interfacial conductivity promotion exceeding the bulk Li-ion conductivity of the ionic liquid electrolyte filler X Chen, B Put, A Sagara, K Gandrud, M Murata, JA Steele, H Yabe, ... Science Advances 6 (2), eaav3400, 2020 | 69 | 2020 |
| Supervised learning using spike-timing-dependent plasticity of memristive synapses Y Nishitani, Y Kaneko, M Ueda IEEE transactions on neural networks and learning systems 26 (12), 2999-3008, 2015 | 59 | 2015 |
| Dynamic observation of brain-like learning in a ferroelectric synapse device Y Nishitani, Y Kaneko, M Ueda, E Fujii, A Tsujimura Japanese Journal of Applied Physics 52 (4S), 04CE06, 2013 | 58 | 2013 |
| Improving the open-circuit voltage of Sn-based perovskite solar cells by band alignment at the electron transport layer/perovskite layer interface T Yokoyama, Y Nishitani, Y Miyamoto, S Kusumoto, R Uchida, T Matsui, ... ACS applied materials & interfaces 12 (24), 27131-27139, 2020 | 49 | 2020 |
| Overview and future challenge of ferroelectric random access memory technologies Y Kato, Y Kaneko, H Tanaka, K Kaibara, S Koyama, K Isogai, T Yamada, ... Japanese Journal of Applied Physics 46 (4S), 2157, 2007 | 46 | 2007 |
| A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming Y Kaneko, Y Nishitani, M Ueda, E Tokumitsu, E Fujii Applied Physics Letters 99 (18), 2011 | 44 | 2011 |
| Correlated motion dynamics of electron channels and domain walls in a ferroelectric-gate thin-film transistor consisting of a ZnO/Pb (Zr, Ti) O3 stacked structure Y Kaneko, Y Nishitani, H Tanaka, M Ueda, Y Kato, E Tokumitsu, E Fujii Journal of Applied Physics 110 (8), 2011 | 43 | 2011 |
| A dual-channel ferroelectric-gate field-effect transistor enabling NAND-type memory characteristics Y Kaneko, H Tanaka, M Ueda, Y Kato, E Fujii IEEE transactions on electron devices 58 (5), 1311-1318, 2011 | 41 | 2011 |
| Neural network based on a three-terminal ferroelectric memristor to enable on-chip pattern recognition Y Kaneko, Y Nishitani, M Ueda, A Tsujimura 2013 Symposium on VLSI Technology, T238-T239, 2013 | 32 | 2013 |
| A ferroelectric gate field effect transistor with a ZnO/Pb (Zr, Ti) O3 heterostructure formed on a silicon substrate H Tanaka, Y Kaneko, Y Kato Japanese journal of applied physics 47 (9S), 7527, 2008 | 31 | 2008 |
| NOR-type nonvolatile ferroelectric-gate memory cell using composite oxide technology Y Kaneko, H Tanaka, Y Kato Japanese Journal of Applied Physics 48 (9S1), 09KA19, 2009 | 21 | 2009 |
| Composition Dependence of Work Function in Metal (Ni, Pt)–Germanide Gate Electrodes D Ikeno, Y Kaneko, H Kondo, M Sakashita, A Sakai, M Ogawa, S Zaima Japanese journal of applied physics 46 (4S), 1865, 2007 | 18 | 2007 |
| High current density Sn-based perovskite solar cells via enhanced electron extraction in nanoporous electron transport layers Y Miyamoto, S Kusumoto, T Yokoyama, Y Nishitani, T Matsui, T Kouzaki, ... ACS Applied Nano Materials 3 (11), 11650-11657, 2020 | 17 | 2020 |
| In situ hard X-ray photoelectron spectroscopy of space charge layer in a ZnO-based all-solid-state electric double-layer transistor T Tsuchiya, Y Itoh, Y Yamaoka, S Ueda, Y Kaneko, T Hirasawa, M Suzuki, ... The Journal of Physical Chemistry C 123 (16), 10487-10493, 2019 | 12 | 2019 |
| Back-propagation operation for analog neural network hardware with synapse components having hysteresis characteristics M Ueda, Y Nishitani, Y Kaneko, A Omote PloS one 9 (11), e112659, 2014 | 12 | 2014 |
| A novel ferroelectric memristor enabling NAND-type analog memory characteristics Y Kaneko, H Tanaka, M Ueda, Y Kato, E Fujii 68th Device Research Conference, 257-258, 2010 | 12 | 2010 |
| Battery-less shock-recording device consisting of a piezoelectric sensor and a ferroelectric-gate field-effect transistor M Ueda, Y Kaneko, Y Nishitani, A Omote Sensors and Actuators A: Physical 232, 75-83, 2015 | 11 | 2015 |
Yu NishitaniPanasonic Holdings Corp.Verified email at jp.panasonic.com
