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Haflidi Petur Gislason
Haflidi Petur Gislason
Professor of Experimental Physics, Science Institute, University of Iceland
Verified email at hi.is
Title
Cited by
Cited by
Year
Properties of Zn‐doped VPE‐grown GaN. I. Luminescence data in relation to doping conditions
B Monemar, O Lagerstedt, HP Gislason
Journal of Applied Physics 51 (1), 625-639, 1980
2101980
Vacancy defects as compensating centers in Mg-doped GaN
S Hautakangas, J Oila, M Alatalo, K Saarinen, L Liszkay, D Seghier, ...
Physical review letters 90 (13), 137402, 2003
1542003
Vacancy defect-induced d0 ferromagnetism in undoped ZnO nanostructures: Controversial origin and challenges
B Qi, S Ólafsson, HP Gíslason
Progress in Materials Science 90, 45-74, 2017
902017
Shifting photoluminescence bands in high-resistivity Li-compensated GaAs
HP Gislason, BH Yang, M Linnarsson
Physical Review B 47 (15), 9418, 1993
761993
Frequency-dependent conductivity in lithium-diffused and annealed GaAs
JT Gudmundsson, HG Svavarsson, S Gudjonsson, HP Gislason
Physica B: Condensed Matter 340, 324-328, 2003
752003
Photoluminescence studies of the 1.911-eV Cu-related complex in GaP
HP Gislason, B Monemar, PJ Dean, DC Herbert, S Depinna, BC Cavenett, ...
Physical Review B 26 (2), 827, 1982
751982
Optical properties of the Cu-related characteristic-orange-luminescence center in GaP
B Monemar, HP Gislason, PJ Dean, DC Herbert
Physical Review B 25 (12), 7719, 1982
641982
Properties of Zn‐doped VPE‐grown GaN. II. Optical cross sections
B Monemar, HP Gislason, O Lagerstedt
Journal of Applied Physics 51 (1), 640-649, 1980
571980
Optical detection of magnetic resonance of the zinc vacancy in ZnSe via magnetic circular dichroism
DY Jeon, HP Gislason, GD Watkins
Physical Review B 48 (11), 7872, 1993
561993
Acceptor associates and bound excitons in GaAs: Cu
ZG Wang, HP Gislason, B Monemar
Journal of applied physics 58 (1), 230-239, 1985
541985
Paramagnetism in Mn/Fe implanted ZnO
HP Gunnlaugsson, TE Mølholt, R Mantovan, H Masenda, D Naidoo, ...
Applied Physics Letters 97 (14), 2010
482010
Determination of the antisite structure in InP by optically detected electron-nuclear double resonance
DY Jeon, HP Gislason, JF Donegan, GD Watkins
Physical Review B 36 (2), 1324, 1987
471987
Electrical characterization of Mg-related energy levels and the compensation mechanism in GaN: Mg
D Seghier, HP Gislason
Journal of Applied Physics 88 (11), 6483-6487, 2000
402000
Neutral (Cu-Li) complexes in GaP: The (Cu-Li bound exciton at 2.306 eV
HP Gislason, B Monemar, ME Pistol, PJ Dean, DC Herbert, A Kana, ...
Physical Review B 31 (6), 3774, 1985
351985
Shallow and deep donors in n-type ZnO characterized by admittance spectroscopy
D Seghier, HP Gislason
Journal of Materials Science: Materials in Electronics 19, 687-691, 2008
332008
Properties of GaN tunneling MIS light‐emitting diodes
O Lagerstedt, B Monemar, H Gislason
Journal of Applied Physics 49 (5), 2953-2957, 1978
281978
Neutral (Cu-Li) complexes in GaP: The (Cu-Li bound exciton at 2.242 eV
HP Gislason, B Monemar, ME Pistol, PJ Dean, DC Herbert, S Depinna, ...
Physical Review B 32 (6), 3958, 1985
251985
Lattice locations and properties of Fe in Co/Fe co-implanted ZnO
HP Gunnlaugsson, K Johnston, TE Mølholt, G Weyer, R Mantovan, ...
Applied Physics Letters 100 (4), 2012
242012
Gallium and nitrogen vacancies in GaN: Impurity decoration effects
S Hautakangas, V Ranki, I Makkonen, MJ Puska, K Saarinen, L Liszkay, ...
Physica B: Condensed Matter 376, 424-427, 2006
242006
Neutral (Cu-Li) complexes in GaP: The (Cu-Li bound exciton at 2.172 eV
HP Gislason, B Monemar, ME Pistol, A Kana’ah, BC Cavenett
Physical Review B 33 (2), 1233, 1986
241986
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