| Robust UV/VUV/EUV PureB Photodiode Detector Technology with High CMOS Compatibility LK Nanver, L Qi, V Mohammadi, KRM Mok, WB de Boer, N Golshani, ... Journal of Selected Topics in Quantum Electronics 20 (6), 1-1, 2014 | 74 | 2014 |
| UV-Sensitive Low Dark-Count PureB Single-Photon Avalanche Diode L Qi, KRC Mok, M Aminian, E Charbon, LK Nanver. IEEE Transactions on Electron Devices 61 (11), 3768-3774, 2014 | 47 | 2014 |
| UV-sensitive low dark-count PureB single-photon avalanche diode L Qi, KRC Mok, E Charbon, L Nanver, M Aminian Sensors, 2013 IEEE, 1-4, 2013 | 47 | 2013 |
| Opto-electronic modeling of light emission from avalanche-mode silicon p+ n junctions S Dutta, RJE Hueting, AJ Annema, L Qi, LK Nanver, J Schmitz Journal of applied physics 118 (11), 2015 | 36 | 2015 |
| Conductance along the interface formed by 400° C pure boron deposition on silicon L Qi, LK Nanver Electron Device Letters 36 (2), 102-104, 2015 | 32 | 2015 |
| VUV/low-energy electron Si photodiodes with postmetal 400 C pureB deposition V Mohammadi, L Qi, N Golshani, CKR Mok, WB de Boer, A Sammak, ... IEEE electron device letters 34 (12), 1545-1547, 2013 | 31 | 2013 |
| Pure dopant deposition of B and Ga for ultrashallow junctions in Si-based devices LK Nanver, A Sammak, V Mohammadi, KRC Mok, L Qi, A Šakić, ... ECS Transactions 49 (1), 25, 2012 | 27 | 2012 |
| A CMOS compatible Ge-on-Si APD operating in proportional and Geiger modes at infrared wavelengths A Sammak, M Aminian, L Qi, WB de Boer, E Charbon, LK Nanver Electron Devices Meeting (IEDM), 2011 IEEE International, 8.5. 1-8.5. 4, 2011 | 25 | 2011 |
| PureGaB p+ n Ge diodes grown in large windows to Si with a sub-300 nm transition region A Sammak, L Qi, WB de Boer, LK Nanver Solid-state electronics 74, 126-133, 2012 | 13 | 2012 |
| Effect of N-doping on band structure and transport property of zigzag graphene nanoribbons L Qi, C Yu-Hang, W Jian-Bao, K Zong-Min Acta Physica Sinica 60 (9), 2011 | 13 | 2011 |
| A Ge-on-Si single-photon avalanche diode operating in Geiger mode at infrared wavelengths M Aminian, A Sammak, L Qi, LK Nanver, E Charbon SPIE Defense, Security, and Sensing, 83750Q-83750Q-10, 2012 | 10 | 2012 |
| Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques L Qi, G Lorito, LK Nanver IEEE transactions on semiconductor manufacturing 25 (4), 581-588, 2012 | 9 | 2012 |
| Lateral-transistor test structures for evaluating the effectiveness of surface doping techniques L Qi, G Lorito, LK Nanver IEEE transactions on semiconductor manufacturing 25 (4), 581-588, 2012 | 9 | 2012 |
| PureB Single-Photon Avalanche Diodes for Low-Energy Electron Detection Down to 200 eV L Qi, S Sluyterman, K Kooijman, KRC Mok, LK Nanver Optics Letters 40 (3), 300-303, 2015 | 8 | 2015 |
| Chemical vapor deposition of Ga dopants for fabricating ultrashallow pn junctions at 400 C A Sammak, L Qi, WB De Boer, LK Nanver 2010 10th IEEE International Conference on Solid-State and Integrated …, 2010 | 8 | 2010 |
| Self-aligned two-layer metallization with low series resistance for litho-less contacting of large-area photodiodes KRC Mok, L Qi, AHG Vlooswijk, LK Nanver Solid-State Electronics 111, 210-217, 2015 | 6 | 2015 |
| Sheet resistance measurement for process monitoring of 400° C PureB deposition on Si L Qi, LK Nanver Proceedings of the 2015 International Conference on Microelectronic Test …, 2015 | 6 | 2015 |
| Fabrication of low dark-count PureB single-photon avalanche diodes L Qi, KRC Mok, M Aminian, E Charbon, LK Nanver 2014 29th Symposium on Microelectronics Technology and Devices (SBMicro), 1-4, 2014 | 6 | 2014 |
| A 270× 1 Ge-on-Si photodetector array for sensitive infrared imaging A Sammak, M Aminian, L Qi, E Charbon, LK Nanver SPIE Photonics Europe, 914104-914104-7, 2014 | 6 | 2014 |
| Interface Properties of Group-III-Element Deposited-Layers Integrated in High-Sensitivity Si Photodiodes L Qi TU Delft, Delft University of Technology, 2016 | 5 | 2016 |
