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Yao-Feng Chang
Yao-Feng Chang
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Year
Cut-and-paste” manufacture of multiparametric epidermal sensor systems
S Yang, YC Chen, L Nicolini, P Pasupathy, J Sacks, B Su, R Yang, ...
Adv. Mater 27 (41), 6423-6430, 2015
3122015
Analog synaptic behavior of a silicon nitride memristor
S Kim, H Kim, S Hwang, MH Kim, YF Chang, BG Park
ACS applied materials & interfaces 9 (46), 40420-40427, 2017
2232017
Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang, YC Hung, YE Syu, YF Chang, ...
Nanoscale research letters 10, 1-27, 2015
1552015
Complementary metal‐oxide semiconductor and memristive hardware for neuromorphic computing
M Rahimi Azghadi, YC Chen, JK Eshraghian, J Chen, CY Lin, ...
Advanced Intelligent Systems 2 (5), 1900189, 2020
1152020
Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing
YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 2014
1132014
Integrated One Diode–One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography
L Ji, YF Chang, B Fowler, YC Chen, TM Tsai, KC Chang, MC Chen, ...
Nano letters 14 (2), 813-818, 2014
1112014
Neuronal dynamics in HfO x/AlO y-based homeothermic synaptic memristors with low-power and homogeneous resistive switching
S Kim, J Chen, YC Chen, MH Kim, H Kim, MW Kwon, S Hwang, M Ismail, ...
Nanoscale 11 (1), 237-245, 2019
982019
Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory
YF Chang, PY Chen, B Fowler, YT Chen, F Xue, Y Wang, F Zhou, JC Lee
Journal of Applied Physics 112 (12), 2012
972012
Demonstration of synaptic behaviors and resistive switching characterizations by proton exchange reactions in silicon oxide
YF Chang, B Fowler, YC Chen, F Zhou, CH Pan, TC Chang, JC Lee
Scientific reports 6 (1), 21268, 2016
952016
Scaling effect on silicon nitride memristor with highly doped Si substrate
S Kim, S Jung, MH Kim, YC Chen, YF Chang, KC Ryoo, S Cho, JH Lee, ...
Small 14 (19), 1704062, 2018
902018
Electroforming and resistive switching in silicon dioxide resistive memory devices
BW Fowler, YF Chang, F Zhou, Y Wang, PY Chen, F Xue, YT Chen, ...
Rsc Advances 5 (27), 21215-21236, 2015
802015
A sub-1-volt analog metal oxide memristive-based synaptic device with large conductance change for energy-efficient spike-based computing systems
CC Hsieh, A Roy, YF Chang, D Shahrjerdi, SK Banerjee
Applied Physics Letters 109 (22), 2016
772016
Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization
YF Chang, B Fowler, YC Chen, YT Chen, Y Wang, F Xue, F Zhou, JC Lee
Journal of Applied Physics 116 (4), 2014
742014
Attaining resistive switching characteristics and selector properties by varying forming polarities in a single HfO2-based RRAM device with a vanadium electrode
CY Lin, PH Chen, TC Chang, KC Chang, SD Zhang, TM Tsai, CH Pan, ...
Nanoscale 9 (25), 8586-8590, 2017
712017
Charge quantity influence on resistance switching characteristic during forming process
TJ Chu, TC Chang, TM Tsai, HH Wu, JH Chen, KC Chang, TF Young, ...
IEEE Electron Device Letters 34 (4), 502-504, 2013
692013
A study of resistive switching effects on a thin FeOx transition layer produced at the oxide/iron interface of TiN/SiO2/Fe-contented electrode structures
LW Feng, CY Chang, YF Chang, WR Chen, SY Wang, PW Chiang, ...
Applied Physics Letters 96 (5), 2010
662010
Study of polarity effect in SiOx-based resistive switching memory
YF Chang, PY Chen, YT Chen, F Xue, Y Wang, F Zhou, B Fowler, JC Lee
Applied Physics Letters 101 (5), 2012
652012
Memory switching properties of e-beam evaporated SiOx on N++ Si substrate
Y Wang, YT Chen, F Xue, F Zhou, YF Chang, B Fowler, JC Lee
Applied Physics Letters 100 (8), 2012
642012
Non-volatile RRAM embedded into 22FFL FinFET technology
O Golonzka, U Arslan, P Bai, M Bohr, O Baykan, Y Chang, A Chaudhari, ...
2019 Symposium on VLSI Technology, T230-T231, 2019
622019
Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory
F Zhou, YF Chang, B Fowler, K Byun, JC Lee
Applied Physics Letters 106 (6), 2015
562015
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