| Growth of cubic phase gallium nitride by modified molecular‐beam epitaxy MJ Paisley, Z Sitar, JB Posthill, RF Davis Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 7 (3 …, 1989 | 453 | 1989 |
| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 409 | 2018 |
| Critical evaluation of the status of the areas for future research regarding the wide band gap semiconductors diamond, gallium nitride and silicon carbide RF Davis, Z Sitar, BE Williams, HS Kong, HJ Kim, JW Palmour, ... Materials Science and Engineering: B 1 (1), 77-104, 1988 | 239 | 1988 |
| Growth of AlN/GaN layered structures by gas source molecular‐beam epitaxy Z Sitar, MJ Paisley, B Yan, J Ruan, WJ Choyke, RF Davis Journal of Vacuum Science & Technology B: Microelectronics Processing and …, 1990 | 149 | 1990 |
| Progress on n‐type doping of AlGaN alloys on AlN single crystal substrates for UV optoelectronic applications R Collazo, S Mita, J Xie, A Rice, J Tweedie, R Dalmau, Z Sitar physica status solidi c 8 (7‐8), 2031-2033, 2011 | 144 | 2011 |
| Seeded growth of AlN bulk single crystals by sublimation R Schlesser, R Dalmau, Z Sitar Journal of crystal growth 241 (4), 416-420, 2002 | 143 | 2002 |
| Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ... Journal of The Electrochemical Society 158 (5), H530, 2011 | 141 | 2011 |
| Seeded growth of AlN bulk crystals in m-and c-orientation P Lu, R Collazo, RF Dalmau, G Durkaya, N Dietz, B Raghothamachar, ... Journal of Crystal Growth 312 (1), 58-63, 2009 | 131 | 2009 |
| On the origin of the 265 nm absorption band in AlN bulk crystals R Collazo, J Xie, BE Gaddy, Z Bryan, R Kirste, M Hoffmann, R Dalmau, ... Applied Physics Letters 100 (19), 191914, 2012 | 130 | 2012 |
| Surface preparation and homoepitaxial deposition of AlN on (0001)-oriented AlN substrates by metalorganic chemical vapor deposition A Rice, R Collazo, J Tweedie, R Dalmau, S Mita, J Xie, Z Sitar Journal of Applied Physics 108 (4), 043510, 2010 | 130 | 2010 |
| Atomic layer deposition of lanthanum aluminum oxide nano-laminates for electrical applications BS Lim, A Rahtu, P de Rouffignac, RG Gordon Applied Physics Letters 84 (20), 3957-3959, 2004 | 120 | 2004 |
| Universal phonon mean free path spectra in crystalline semiconductors at high temperature JP Freedman, JH Leach, EA Preble, Z Sitar, RF Davis, JA Malen Scientific reports 3 (1), 1-6, 2013 | 119 | 2013 |
| High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates Z Bryan, I Bryan, J Xie, S Mita, Z Sitar, R Collazo Applied Physics Letters 106 (14), 142107, 2015 | 118 | 2015 |
| Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ... Applied Physics Letters 102 (17), 171102, 2013 | 117 | 2013 |
| Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ... Applied Physics Express 5 (12), 122101, 2012 | 117 | 2012 |
| The growth and optical properties of large, high-quality single crystals M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ... Journal of Applied Physics 96 (10), 5870-5876, 2004 | 114 | 2004 |
| Performance and reliability of deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy T Kinoshita, T Obata, T Nagashima, H Yanagi, B Moody, S Mita, S Inoue, ... Applied Physics Express 6 (9), 092103, 2013 | 112 | 2013 |
| Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ... Applied Physics Express 5 (5), 055504, 2012 | 109 | 2012 |
| Growth of AlN single crystalline boules ZG Herro, D Zhuang, R Schlesser, Z Sitar Journal of Crystal Growth 312 (18), 2519-2521, 2010 | 109 | 2010 |
| Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition S Mita, R Collazo, A Rice, RF Dalmau, Z Sitar Journal of Applied Physics 104 (1), 013521, 2008 | 109 | 2008 |
Ramon CollazoAssociate Professor of Materials Science and Engineering, NCSUVerified email at ncsu.edu
