Raghuraj Hathwar
Raghuraj Hathwar
Verified email at asu.edu
Title
Cited by
Cited by
Year
Analysis of the reverse IV characteristics of diamond-based PIN diodes
M Saremi, R Hathwar, M Dutta, FAM Koeck, RJ Nemanich, S Chowdhury, ...
Applied Physics Letters 111 (4), 043507, 2017
312017
Measurement and effects of polarization fields on one-monolayer-thick InN/GaN multiple quantum wells
L Zhou, E Dimakis, R Hathwar, T Aoki, DJ Smith, TD Moustakas, ...
Physical Review B 88 (12), 125310, 2013
252013
A 4.5 μm PIN diamond diode for detecting slow neutrons
J Holmes, M Dutta, FA Koeck, M Benipal, J Brown, B Fox, R Hathwar, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2018
212018
Demonstration of diamond-based Schottky pin diode with blocking voltage> 500 V
M Dutta, FAM Koeck, R Hathwar, SM Goodnick, RJ Nemanich, ...
IEEE Electron Device Letters 37 (9), 1170-1173, 2016
212016
Temperature dependent simulation of diamond depleted Schottky PIN diodes
R Hathwar, M Dutta, FAM Koeck, RJ Nemanich, S Chowdhury, ...
Journal of Applied Physics 119 (22), 225703, 2016
142016
Determination of minority carrier lifetime of holes in diamond pin diodes using reverse recovery method
M Dutta, S Mandal, R Hathwar, AM Fischer, FAM Koeck, RJ Nemanich, ...
IEEE Electron Device Letters 39 (4), 552-555, 2018
62018
Modeling of multi-band drift in nanowires using a full band Monte Carlo simulation
R Hathwar, M Saraniti, SM Goodnick
Journal of Applied Physics 120 (4), 044307, 2016
52016
Energy relaxation and non-linear transport in InAs nanowires
R Hathwar, M Saraniti, SM Goodnick
Journal of Physics: Conference Series 647 (1), 012029, 2015
52015
Nonequilibrium electron and phonon dynamics in advanced concept solar cells
R Hathwar, Y Zou, C Jirauschek, SM Goodnick
Journal of Physics D: Applied Physics 52 (9), 093001, 2019
42019
Vertically grown Ge nanowire Schottky diodes on Si and Ge substrates
N Chandra, CJ Tracy, JH Cho, ST Picraux, R Hathwar, SM Goodnick
Journal of Applied Physics 118 (2), 024301, 2015
32015
Generalized Monte Carlo Tool for Investigating Low-Field and High Field Properties of Materials Using Non-parabolic Band Structure Model
R Hathwar, D Vasileska
Arizona State University, 2011
22011
Neutralizing the polarization effect of diamond diode detectors using periodic forward bias pulses
JM Holmes, M Dutta, FA Koeck, MK Benipal, R Hathwar, J Brown, B Fox, ...
Diamond and Related Materials 94, 162-165, 2019
12019
Full band Monte Carlo simulation of In0.7Ga0.3As junctionless nanowire field effect transistors
R Hathwar, M Saraniti, SM Goodnick
14th IEEE International Conference on Nanotechnology, 645-649, 2014
12014
Current generation from radiation with diamond diode-based devices for detection or power generation
JM Holmes, FA Koeck, M Dutta, M Benipal, R Hathwar, RO Alarcon, ...
US Patent App. 16/601,038, 2020
2020
Simulation of nonequilibrium electron and phonon dynamics in advanced concept photovoltaic devices (Conference Presentation)
SM Goodnick, Y Zou, R Hathwar
Physics, Simulation, and Photonic Engineering of Photovoltaic Devices IX …, 2020
2020
Monte Carlo Device Simulations
K Raleva, AR Shaik, R Hathwar, AK Laturia, SS Qazi, R Daugherty, ...
Handbook of Optoelectronic Device Modeling and Simulation, 773-806, 2017
2017
Carrier relaxation and impact ionization in core-shell III–V nanowires
R Hathwar, M Saraniti, SM Goodnick
2016 IEEE 16th International Conference on Nanotechnology (IEEE-NANO), 832-835, 2016
2016
Full Band Monte Carlo Simulation of Nanowires and Nanowire Field Effect Transistors
R Hathwar
Arizona State University, 2016
2016
Full Band Monte Carlo Simulation of InGaAs Junctionless Nanowire Field Effect Transistors.
R Hathwar, M Saraniti, S Goodnick
Bulletin of the American Physical Society 60, 2015
2015
Modeling Quantum Acceleration of Bloch Waves in Nanowires
R Hathwar, M Saraniti, SM Goodnick
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Articles 1–20