| Comprehensive analysis of random telegraph noise instability and its scaling in deca–nanometer flash memories A Ghetti, CM Compagnoni, AS Spinelli, A Visconti IEEE Transactions on Electron Devices 56 (8), 1746-1752, 2009 | 248 | 2009 |
| Strained Si, Ge, and Si 1− x Ge x alloys modeled with a first-principles-optimized full-zone k∙ p method D Rideau, M Feraille, L Ciampolini, M Minondo, C Tavernier, H Jaouen, ... Physical Review B 74 (19), 195208, 2006 | 192 | 2006 |
| Field acceleration for oxide breakdown-can an accurate anode hole injection model resolve the E vs. 1/E controversy? MA Alam, J Bude, A Ghetti Reliability Physics Symposium, 2000. Proceedings. 38th Annual 2000 IEEE …, 2000 | 143 | 2000 |
| The ballistic nano-transistor G Timp, J Bude, KK Bourdelle, J Garno, A Ghetti, H Gossmann, M Green, ... Electron Devices Meeting, 1999. IEDM'99. Technical Digest. International, 55-58, 1999 | 142 | 1999 |
| Scaling trends for random telegraph noise in deca-nanometer Flash memories A Ghetti, CM Compagnoni, F Biancardi, AL Lacaita, S Beltrami, ... Electron Devices Meeting, 2008. IEDM 2008. IEEE International, 1-4, 2008 | 91 | 2008 |
| Tunneling into interface states as reliability monitor for ultrathin oxides A Ghetti, E Sangiorgi, J Bude, TW Sorsch, G Weber IEEE Transactions on Electron Devices 47 (12), 2358-2365, 2000 | 88 | 2000 |
| Progress toward 10 nm CMOS devices G Timp, KK Bourdelle, JE Bower, FH Baumann, T Boone, R Cirelli, ... Electron Devices Meeting, 1998. IEDM'98. Technical Digest., International …, 1998 | 85 | 1998 |
| First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming CM Compagnoni, AS Spinelli, R Gusmeroli, AL Lacaita, S Beltrami, ... Electron Devices Meeting, 2007. IEDM 2007. IEEE International, 165-168, 2007 | 81 | 2007 |
| Gate oxide reliability projection to the sub-2 nm regime BE Weir, MA Alam, JD Bude, PJ Silverman, A Ghetti, F Baumann, ... Semiconductor Science and Technology 15 (5), 455, 2000 | 79 | 2000 |
| Ultimate Accuracy for the nand Flash Program Algorithm Due to the Electron Injection Statistics CM Compagnoni, AS Spinelli, R Gusmeroli, S Beltrami, A Ghetti, ... IEEE Transactions on Electron Devices 55 (10), 2695-2702, 2008 | 73 | 2008 |
| Gate oxides in 50 nm devices: Thickness uniformity improves projected reliability BE Weir, PJ Silverman, MA Alam, F Baumann, D Monroe, A Ghetti, ... Electron Devices Meeting, 1999. IEDM'99. Technical Digest. International …, 1999 | 67 | 1999 |
| Characterization of tunneling current in ultra-thin gate oxide A Ghetti, CT Liu, M Mastrapasqua, E Sangiorgi Solid-State Electronics 44 (9), 1523-1531, 2000 | 65 | 2000 |
| Giant random telegraph signals in nanoscale floating-gate devices P Fantini, A Ghetti, A Marinoni, G Ghidini, A Visconti, A Marmiroli IEEE Electron Device Letters 28 (12), 1114-1116, 2007 | 64 | 2007 |
| Physical modeling of single-trap RTS statistical distribution in Flash memories A Ghetti, M Bonanomi, CM Compagnoni, AS Spinelli, AL Lacaita, ... Reliability Physics Symposium, 2008. IRPS 2008. IEEE International, 610-615, 2008 | 59 | 2008 |
| Low voltage tunneling in ultra-thin oxides: a monitor for interface states and degradation A Ghetti, E Sangiorgi, J Bude, TW Sorsch, G Weber Electron Devices Meeting, 1999. IEDM'99. Technical Digest. International …, 1999 | 51 | 1999 |
| Atomic migration in phase change materials G Novielli, A Ghetti, E Varesi, A Mauri, R Sacco Electron devices meeting (IEDM), 2013 IEEE international, 22.3. 1-22.3. 4, 2013 | 47 | 2013 |
| Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state SM Amoroso, CM Compagnoni, A Ghetti, L Gerrer, AS Spinelli, AL Lacaita, ... IEEE Electron Device Letters 34 (5), 683-685, 2013 | 47 | 2013 |
| Gate oxide reliability: Physical and computational models A Ghetti Predictive Simulation of Semiconductor Processing, 201-258, 2004 | 43 | 2004 |
| Injection efficiency of CHISEL gate currents in short MOS devices: physical mechanisms, device implications, and sensitivity to technological parameters D Esseni, L Selmi, A Ghetti, E Sangiorgi IEEE Transactions on Electron Devices 47 (11), 2194-2200, 2000 | 42 | 2000 |
| 3D simulation study of gate coupling and gate cross-interference in advanced floating gate non-volatile memories A Ghetti, L Bortesi, L Vendrame Solid-state electronics 49 (11), 1805-1812, 2005 | 41 | 2005 |
