| Effect of different EBL structures on deep violet InGaN laser diodes performance G Alahyarizadeh, M Amirhoseiny, Z Hassan Optics & Laser Technology 76, 106-112, 2016 | 33 | 2016 |
| Characterizations of InN thin films grown on Si (110) substrate by reactive sputtering M Amirhoseiny, Z Hassan, SS Ng, MA Ahmad Journal of Nanomaterials 2011, 1-7, 2011 | 31 | 2011 |
| Synthesis of CuS nanoparticles by laser ablation method in DMSO media M Khademian, M Zandi, M Amirhoseiny, D Dorranian Journal of Cluster Science 28, 2753-2764, 2017 | 27 | 2017 |
| Fabrication of InN based photodetector using porous silicon buffer layer M Amirhoseiny, Z Hassan, SS Ng Surface engineering 29 (10), 772-777, 2013 | 17 | 2013 |
| Effect of annealing temperature on IR-detectors based on InN nanostructures M Amirhoseiny, Z Hassan, SS Ng, G Alahyarizadeh Vacuum 106, 46-48, 2014 | 15 | 2014 |
| Photoluminescence spectra of nitrogen-rich InN thin films grown on Si (110) and photoelectrochemical etched Si (110) M Amirhoseiny, Z Hassan, SS Ng Vacuum 101, 217-220, 2014 | 15 | 2014 |
| Comparative study on structural and optical properties of nitrogen rich InN on Si (110) and 6H-SiC M Amirhoseiny, Z Hassan, SS Ng Surface engineering 29 (7), 561-565, 2013 | 13 | 2013 |
| Structure and optical properties of InN thin film grown on SiC by reactive RF magnetron sputtering M Amirhoseiny, Z Hassan, SS Ng, G Alahyarizadeh Surface Review and Letters 20 (01), 1350008, 2013 | 11 | 2013 |
| InN Photoconductors on different orientations of Si substrates M Amirhoseiny, Z Hassan, SS Ng, LS Chuah, MA Ahmad, Y Yusof International Journal of Modern Physics B 26 (31), 1250137, 2012 | 11 | 2012 |
| The effect of AlGaN bulk and AlGaN/GaN superlattice cladding layers on performance characteristics of deep violet InGaN DQW lasers M Amirhoseiny, G Alahyarizadeh Vacuum 141, 139-143, 2017 | 10 | 2017 |
| Effect of deposition conditions on properties of nitrogen rich-InN nanostructures grown on anisotropic Si (110) M Amirhoseiny, SS Ng, Z Hassan Materials Science in Semiconductor Processing 35, 216-221, 2015 | 10 | 2015 |
| Growth of InN thin films on different Si substrates at ambient temperature M Amirhoseiny, Z Hassan, S Shiong Ng Microelectronics international 30 (2), 63-67, 2013 | 8 | 2013 |
| Fabrication of heterostructure InN/photo-electrochemical etched silicon (110) M Amirhoseiny, Z Hassan, SS Ng International Journal of Electrochemical Science 8 (4), 5042-5051, 2013 | 8 | 2013 |
| Enhancement of deep violet InGaN double quantum wells laser diodes performance characteristics using superlattice last quantum barrier M Amirhoseiny, G Alahyarizadeh Journal of Optoelectronical Nanostructures 6 (2), 107-120, 2021 | 7 | 2021 |
| Synthesis of nanocrystalline In2O3 on different Si substrates at wet oxidation environment M Amirhoseiny, Z Hassan, N ShaShiong Optik-International Journal for Light and Electron Optics 124 (17), 2679-2681, 2013 | 6 | 2013 |
| COMPARATIVE STUDY OF THE PERFORMANCE CHARACTERISTICS OF GREEN InGaN SQW LASER DIODES WITH TERNARY AlGaN AND QUATERNARY AlInGaN ELECTRON BLOCKING LAYER. G Alahyarizadeh, Z Hassan, SM Thahab, M Amirhoseiny, N Naderi Digest Journal of Nanomaterials & Biostructures (DJNB) 7 (4), 2012 | 6 | 2012 |
| Effect of QW thickness and numbers on performance characteristics of deep violet InGaN MQW lasers G Alahyarizadeh, M Amirhoseiny, Z Hassan International Journal of Modern Physics B 29 (13), 1550081, 2015 | 5 | 2015 |
| Effect of current density on optical properties of anisotropic photoelectrochemical etched silicon (110) M Amirhoseiny, Z Hassan, SS Ng Modern Physics Letters B 26 (20), 1250131, 2012 | 5 | 2012 |
| Optical properties of photo-electrochemical etching of anisotropic silicon (110) M Amirhoseiny, Z Hassan, N ShaShiong IEICE Electronics Express 9 (8), 752-757, 2012 | 5 | 2012 |
| Performance enhancement of deep violet InGaN double quantum wells laser diodes with quaternary superlattice barriers structure G Alahyarizadeh, M Amirhoseiny, M Khorsandi Journal of Renewable Energy and Environment 9 (1), 106-111, 2022 | 3 | 2022 |
