| Applying a systematic approach to link requirements and testing: A case study J Kukkanen, K Väkeväinen, M Kauppinen, E Uusitalo 2009 16th Asia-Pacific Software Engineering Conference, 482-488, 2009 | 38 | 2009 |
| Stopping powers of GaAs for 0.3–2.5 MeV 1H and 4He ions M Rajatora, K Väkeväinen, T Ahlgren, E Rauhala, J Räisänen, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996 | 16 | 1996 |
| Stopping power measurements of 0.5–10.5 MeV 7Li ions in polyimide, vyns, formvar, and polysulfone F Munnik, K Väkeväinen, J Räisänen, U Wätjen Journal of applied physics 86 (7), 3934-3938, 1999 | 15 | 1999 |
| Transient hygrothermal behaviour of portable electronics J Punch, R Grimes, G Heaslip, T Galkin, K Vakevainen, V Kyyhkynen, ... EuroSimE 2005. Proceedings of the 6th International Conference on Thermal …, 2005 | 13 | 2005 |
| Majority carrier traps in proton-irradiated GaInP JR Dekker, A Tukiainen, R Jaakkola, K Väkeväinen, J Lammasniemi, ... Applied physics letters 73 (24), 3559-3561, 1998 | 12 | 1998 |
| Defect formation and annealing behavior of InP implanted by low-energy ions E Rauhala, T Ahlgren, K Väkeväinen, J Räisänen, J Keinonen, ... Journal of applied physics 83 (2), 738-746, 1998 | 10 | 1998 |
| Factors that influence ionic migration on printed wiring boards M Reid, J Punch, B Rodgers, MJ Pomeroy, T Galkin, T Stenberg, ... 2005 IEEE International Reliability Physics Symposium, 2005. Proceedings …, 2005 | 7 | 2005 |
| Annealing behaviour of high-dose-implanted nitrogen in InP J Likonen, K Väkeväinen, T Ahlgren, J Räisänen, E Rauhala, J Keinonen Applied Physics A 62, 463-468, 1996 | 7 | 1996 |
| Stopping cross sections of ZnSe, Zn and Cu for 1H, 4He and 7Li ions K Väkeväinen Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1997 | 6 | 1997 |
| Oxide development on coated copper contacts M Reid, J Punch, T Galkin, K Vakevainen, T Stenberg, M Vilen, ... EuroSimE 2005. Proceedings of the 6th International Conference on Thermal …, 2005 | 5 | 2005 |
| Range profiles of 6–10 MeV 15N ions implanted in silicon T Ahlgren, K Väkeväinen, J Räisänen, E Rauhala, J Keinonen Applied surface science 90 (4), 419-423, 1995 | 5 | 1995 |
| Development Of Shock And Vibration Test Specifications For Telecommunication Equipment In Automotive Environments M Juntunen, K Vehviläinen, K Väkeväinen, K Ojala ESTECH 2001, 2001 | 4 | 2001 |
| Determination of usage environment of mobile phones K Väkeväinen, J Hannula, K Ojala IEST47th Annual Technical meeting, Phoenix, 2001 | 4 | 2001 |
| STOPPING CROSS ELECTRONS OF ZNSE, ZN AND CU FOR 1H, 4HE AND 7LI IONS K Vakevainen Nuclear instruments & methods in physics research. Section B, Beam …, 1997 | 4 | 1997 |
| Experiences of Cooperation between a Higher Education Institutions and Industry and its Impact on Working Culture S Juvonen, P Nurkka, K Väkeväinen International Academy of Technology, Education and Development, 2017 | 3 | 2017 |
| Exfoliation process of InP caused by 1H and 4He ion implantation and its correlation with ion range parameters K Väkeväinen, M Rajatora, T Ahlgren, E Rauhala, J Räisänen Applied surface science 120 (1-2), 30-34, 1997 | 3 | 1997 |
| Export of Education by Finnish Universities of Applied Sciences: Reflections on best practices R Vanhanen Jyväskylän ammattikorkeakoulu, 2016 | 2 | 2016 |
| Experimental and theoretical studies on air exchange of portable devices M Olin, L Laakso, J Hannula, T Galkin, K Väkeväinen, K Hartikainen Comsol Conference Copenhagen, 2006 | 2 | 2006 |
| Data Logger Device For Usage Environment Of Mobile Phones, K Ojala, K Väkeväinen ESTECH 2001, 2001 | 2 | 2001 |
| Annealing behaviour and ranges of implanted ions in III–V and II–VI compound semiconductor materials K Väkeväinen, T Ahlgren, E Rauhala, J Räisänen Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1998 | 2 | 1998 |
