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Boyan Boyanov
Boyan Boyanov
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Title
Cited by
Cited by
Year
Tri-gate fully-depleted CMOS transistors: Fabrication, design and layout
B Doyle, B Boyanov, S Datta, M Doczy, S Hareland, B Jin, J Kavalieros, ...
2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No …, 2003
3632003
Strained transistor integration for CMOS
B Boyanov, A Murthy, BS Doyle, R Chau
US Patent 7,662,689, 2010
3092010
Method of making a semiconductor transistor
AS Murthy, B Boyanov, R Soman, RS Chau
US Patent 6,812,086, 2004
1512004
Transistor gate electrode having conductor material layer
A Murthy, B Boyanov, S Datta, BS Doyle, BY Jin, S Yu, R Chau
US Patent 7,223,679, 2007
1192007
Method for improving transistor performance through reducing the salicide interface resistance
A Murthy, B Boyanov, GA Glass, T Hoffmann
US Patent 6,949,482, 2005
1112005
Re-investigation of titanium silicalite by X-ray absorption spectroscopy: are the novel titanium sites real?
S Pei, GW Zajac, JA Kaduk, J Faber, BI Boyanov, D Duck, D Fazzini, ...
Catalysis letters 21, 333-344, 1993
1051993
Double-gate transistor with enhanced carrier mobility
B Boyanov, B Doyle, J Kavalieros, A Murthy, R Chau
US Patent 6,974,733, 2005
902005
Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
A Murthy, R Soman, B Boyanov
US Patent 6,723,622, 2004
842004
Silicon nano-transistors for logic applications
R Chau, B Boyanov, B Doyle, M Doczy, S Datta, S Hareland, B Jin, ...
Physica E: Low-dimensional systems and nanostructures 19 (1-2), 1-5, 2003
792003
Estimation of measurement uncertainties in XAFS data
M Newville, BI Boyanov, DE Sayers
Journal of synchrotron radiation 6 (3), 264-265, 1999
711999
Biosensors for biological or chemical analysis and methods of manufacturing the same
CF Zhong, H Finkelstein, B Boyanov, D Dehlinger, D Segale
US Patent 10,254,225, 2019
632019
X-ray photoelectron spectroscopy measurement of the Schottky barrier at the SiC (N)/Cu interface
SW King, M French, M Jaehnig, M Kuhn, B Boyanov, B French
Journal of Vacuum Science & Technology B 29 (5), 2011
632011
Method of forming a germanium film on a semiconductor substrate that includes the formation of a graded silicon-germanium buffer layer prior to the formation of a germanium layer
A Murthy, R Soman, B Boyanov
US Patent App. 10/448,817, 2003
562003
Method for improving transistor performance through reducing the salicide interface resistance
A Murthy, B Boyanov, GA Glass, T Hoffmann
US Patent 7,274,055, 2007
472007
Dielectric spacers for metal interconnects and method to form the same
JD Bielefeld, B Boyanov
US Patent 7,772,702, 2010
462010
Semiconductor interconnect structures
B Boyanov, K Singh, J Clarke, A Myers
US Patent 8,772,938, 2014
442014
Fabricating strained channel epitaxial source/drain transistors
A Murthy, JK Brask, AN Westmeyer, B Boyanov, N Lindert
US Patent 7,226,842, 2007
442007
Biochemically activated electronic device
B Boyanov, JG Mandell, J Bai, KL Gunderson, CY Chen, M Perbost
US Patent 10,605,766, 2020
432020
Reducing internal film stress in dielectric film
G Kloster, B Boyanov, M Goodner, M Moinpour, M Haverty
US Patent App. 11/096,678, 2006
402006
Forming a porous dielectric layer and structures formed thereby
B Boyanov, GM Kloster, V Ramachandrarao, HM Park
US Patent 7,179,755, 2007
392007
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